Sk hynix inc. (20240118332). TEST DEVICE FOR DETERMINING AN EFFECTIVE WORK FUNCTION, METHOD OF MANUFACTURING THE SAME AND METHOD OF DETERMINING AN EFFECTIVE WORK FUNCTION simplified abstract
Contents
- 1 TEST DEVICE FOR DETERMINING AN EFFECTIVE WORK FUNCTION, METHOD OF MANUFACTURING THE SAME AND METHOD OF DETERMINING AN EFFECTIVE WORK FUNCTION
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 TEST DEVICE FOR DETERMINING AN EFFECTIVE WORK FUNCTION, METHOD OF MANUFACTURING THE SAME AND METHOD OF DETERMINING AN EFFECTIVE WORK FUNCTION - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
TEST DEVICE FOR DETERMINING AN EFFECTIVE WORK FUNCTION, METHOD OF MANUFACTURING THE SAME AND METHOD OF DETERMINING AN EFFECTIVE WORK FUNCTION
Organization Name
Inventor(s)
Gyeong Ho Hyun of Icheon-si Gyeonggi-do (KR)
TEST DEVICE FOR DETERMINING AN EFFECTIVE WORK FUNCTION, METHOD OF MANUFACTURING THE SAME AND METHOD OF DETERMINING AN EFFECTIVE WORK FUNCTION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240118332 titled 'TEST DEVICE FOR DETERMINING AN EFFECTIVE WORK FUNCTION, METHOD OF MANUFACTURING THE SAME AND METHOD OF DETERMINING AN EFFECTIVE WORK FUNCTION
Simplified Explanation
The patent application describes a test device with a test memory device, an insulation layer, and a charge injection electrode for injecting charge into the memory device based on voltage.
- The test memory device consists of a memory layer and a gate electrode layer on a semiconductor substrate.
- The insulation layer is placed on the test memory device.
- The charge injection electrode is positioned on the insulation layer to inject charge into the test memory device.
Potential Applications
This technology could be applied in semiconductor testing, memory device development, and charge injection studies.
Problems Solved
This innovation helps in testing memory devices, studying charge injection mechanisms, and improving semiconductor performance.
Benefits
The test device allows for efficient charge injection testing, enhances memory device reliability, and aids in semiconductor research and development.
Potential Commercial Applications
Commercial applications include semiconductor testing equipment, memory device manufacturing tools, and research instruments for charge injection studies.
Possible Prior Art
One possible prior art could be the use of similar test devices in semiconductor research and development labs.
Unanswered Questions
How does the charge injection electrode interact with the memory device at a molecular level?
The detailed molecular interactions between the charge injection electrode and the memory device are not explicitly discussed in the abstract.
What specific voltage levels are required for optimal charge injection into the memory device?
The abstract does not mention the exact voltage levels needed for efficient charge injection, leaving this aspect open for further exploration.
Original Abstract Submitted
a test device may include a test memory device, an insulation layer and a charge injection electrode. the test memory device may include a memory layer and a gate electrode layer on a semiconductor substrate. the insulation layer may be arranged on the test memory device. the charge injection electrode may be arranged on the insulation layer to inject a charge into the test memory device based on a voltage.
