View source for Samsung electronics co., ltd. (20240138157). THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE ANDELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract

=THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE ANDELECTRONIC SYSTEM INCLUDING THE SAME=


==Organization Name==

[[:Category:samsung electronics co., ltd.|samsung electronics co., ltd.]]


[[Category:samsung electronics co., ltd.]]

==Inventor(s)==

[[:Category:JIWON Kim of Suwon-si (KR)|JIWON Kim of Suwon-si (KR)]][[Category:JIWON Kim of Suwon-si (KR)]]

[[:Category:Dohyung Kim of Suwon-si (KR)|Dohyung Kim of Suwon-si (KR)]][[Category:Dohyung Kim of Suwon-si (KR)]]

[[:Category:Jiyoung Kim of Suwon-si (KR)|Jiyoung Kim of Suwon-si (KR)]][[Category:Jiyoung Kim of Suwon-si (KR)]]

[[:Category:Sukkang Sung of Suwon-si (KR)|Sukkang Sung of Suwon-si (KR)]][[Category:Sukkang Sung of Suwon-si (KR)]]

==THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE ANDELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240138157 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE ANDELECTRONIC SYSTEM INCLUDING THE SAME

==Simplified Explanation==

A three-dimensional semiconductor memory device includes a peripheral structure and a cell structure. The cell structure consists of a substrate with gate electrodes stacked on one surface, an insulating layer on the opposite surface, a penetration contact plug, two gapfill conductive patterns, and two gapfill spacers.

* Substrate with gate electrodes stacked on one surface
* Insulating layer on the opposite surface
* Penetration contact plug penetrating the substrate
* Two gapfill conductive patterns provided to penetrate the substrate and insulating layer
* Two gapfill spacers between the conductive patterns and the substrate

== Potential Applications ==
The technology can be applied in the development of high-density and high-performance semiconductor memory devices for various electronic devices.

== Problems Solved ==
This technology solves the challenge of increasing memory density and performance in semiconductor devices by utilizing a three-dimensional cell structure.

== Benefits ==
The benefits of this technology include improved memory storage capacity, faster data access speeds, and enhanced overall performance of semiconductor memory devices.

== Potential Commercial Applications ==
The potential commercial applications of this technology include the production of advanced solid-state drives (SSDs), mobile devices, and other electronic products requiring high-speed and high-capacity memory storage.

== Possible Prior Art ==
One possible prior art for this technology could be the development of three-dimensional NAND flash memory technology, which also aims to increase memory density and performance in semiconductor devices.

== Unanswered Questions ==

=== How does this technology compare to existing three-dimensional memory structures in terms of performance and scalability? ===
The article does not provide a direct comparison with existing three-dimensional memory structures, leaving a gap in understanding the competitive advantages of this technology.

=== What are the potential limitations or challenges in implementing this three-dimensional semiconductor memory device in mass production? ===
The article does not address any potential limitations or challenges in mass production, leaving uncertainties about the practicality and feasibility of scaling up this technology for commercial use.


==Original Abstract Submitted==

a three-dimensional semiconductor memory device may include a peripheral structure and a cell structure on the peripheral structure. the cell structure may include a substrate having first and second surfaces, which are opposite to each other, a stack including gate electrodes, which are stacked on the first surface of the substrate, an insulating layer on the second surface of the substrate, a penetration contact plug penetrating the first surface of the substrate, a first gapfill conductive pattern provided to penetrate the second surface of the substrate and the insulating layer and spaced apart from the penetration contact plug, a second gapfill conductive pattern provided to penetrate the second surface of the substrate and the insulating layer and connected to the penetration contact plug, a first gapfill spacer between the first gapfill conductive pattern and the substrate, and a second gapfill spacer between the second gapfill conductive pattern and the substrate.



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