Samsung electronics co., ltd. (20240138137). SEMICONDUCTOR DEVICE simplified abstract

SEMICONDUCTOR DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

Jung Gun You of Suwon-si (KR)

Sug Hyun Sung of Suwon-si (KR)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240138137 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the abstract includes a substrate with first and second regions, active patterns, gate structures, and source/drain patterns. The second active pattern has a height identical to the first active pattern but with a different gate electrode width. The number of sheet patterns in the second active pattern is greater than in the first active pattern.

• Explanation of the patent/innovation:

 * The semiconductor device features active patterns with different gate electrode widths, allowing for improved performance and functionality.
 * The design of the source/drain patterns connected to the sheet patterns enhances the overall efficiency of the device.
 * The unequal distribution of sheet patterns in the active patterns helps optimize the semiconductor device's operation.

• Potential applications of this technology:

 * Advanced integrated circuits
 * High-performance electronic devices
 * Power-efficient semiconductor components

• Problems solved by this technology:

 * Enhanced performance and functionality of semiconductor devices
 * Improved efficiency and optimization of circuit designs

• Benefits of this technology:

 * Increased speed and reliability of electronic devices
 * Enhanced power efficiency and reduced energy consumption
 * Optimal utilization of semiconductor materials

• Potential commercial applications of this technology:

 * Consumer electronics
 * Telecommunications equipment
 * Automotive electronics

• Possible prior art:

 * Prior art related to semiconductor device designs with varying gate electrode widths and sheet pattern distributions.

1. 1. 1. Unanswered Questions:
         1. How does the unequal distribution of sheet patterns impact the overall performance of the semiconductor device?

The unequal distribution of sheet patterns may affect the device's efficiency and functionality, but further testing and analysis are needed to determine the exact impact.

1. 1. 1. 1. What are the potential challenges in implementing active patterns with different gate electrode widths in semiconductor devices?

The implementation of active patterns with varying gate electrode widths may pose challenges in terms of manufacturing processes, material compatibility, and overall device reliability. Further research and development are necessary to address these potential challenges.

Original Abstract Submitted

a semiconductor device includes a substrate including first and second regions; a first active pattern including a first lower pattern and first sheet patterns; a second active pattern including a second lower pattern, a height of the second lower pattern being identical to a height of the first lower pattern, and second sheet patterns; a first gate structure including a first gate insulating film and a first gate electrode; a second gate structure including a second gate insulating film, and a second gate electrode, a width of the second gate electrode being greater than a width of the first gate electrode; a first source/drain pattern on the first lower pattern and connected to the first sheet patterns; and a second source/drain pattern on the second lower pattern and connected to the second sheet patterns, wherein a number of first sheet patterns is smaller than a number of second sheet patterns.