Samsung electronics co., ltd. (20240136425). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Inventor(s)
Edwardnamkyu Cho of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136425 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The manufacturing method of a semiconductor device involves forming sacrificial patterns, insulating layers, dummy patterns, source/drain patterns, and gate electrodes in a specific sequence to create the final device.
- Plurality of main gate sacrificial patterns are formed on a stacked structure of subgate sacrificial patterns and semiconductor patterns.
- First insulating layer is formed between main gate sacrificial patterns.
- Main gate sacrificial patterns are removed.
- Subgate sacrificial patterns are removed.
- Main gate dummy pattern is formed in the space left by the removed main gate sacrificial patterns.
- Subgate dummy patterns are formed in the space left by the removed subgate sacrificial patterns.
- Recess is formed under the space where the first insulating layer is removed.
- Source/drain pattern is formed within the recess.
- Second insulating layer is formed on the source/drain pattern.
- Main gate dummy pattern and subgate dummy patterns are removed.
- Gate electrode is formed in the space left by the removed dummy patterns.
Potential Applications
The technology can be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits, microprocessors, and memory chips.
Problems Solved
This method helps in improving the performance and efficiency of semiconductor devices by optimizing the structure and materials used in their fabrication process.
Benefits
The method allows for the precise formation of gate electrodes and source/drain patterns, leading to enhanced functionality and reliability of semiconductor devices.
Potential Commercial Applications
The technology can be utilized by semiconductor manufacturers to produce high-quality and high-performance electronic components for various applications in consumer electronics, telecommunications, automotive, and industrial sectors.
Possible Prior Art
Previous methods of manufacturing semiconductor devices may have involved similar processes of forming sacrificial patterns, insulating layers, and dummy patterns, but this specific sequence and combination of steps could be a novel innovation in the field.
Unanswered Questions
How does this method compare to traditional semiconductor manufacturing processes?
This method offers a more precise and controlled approach to forming gate electrodes and source/drain patterns, potentially leading to improved device performance and reliability compared to conventional techniques.
What are the potential challenges or limitations of implementing this manufacturing method on a large scale?
One challenge could be the scalability of the process and ensuring uniformity and consistency across a large number of semiconductor devices produced using this method. Additionally, the cost-effectiveness and feasibility of integrating this technique into existing manufacturing facilities may need to be evaluated.
Original Abstract Submitted
a manufacturing method of a semiconductor device, includes forming a plurality of main gate sacrificial patterns spaced apart from each other on a stacked structure of subgate sacrificial patterns and semiconductor patterns; forming a first insulating layer between main gate sacrificial patterns; removing the main gate sacrificial patterns; removing the subgate sacrificial patterns; forming a main gate dummy pattern in a space from which the main gate sacrificial patterns are removed; forming a plurality of subgate dummy patterns in a space from which the subgate sacrificial patterns are removed; forming a recess under a space where the first insulating layer is removed; forming a source/drain pattern within the recess; forming a second insulating layer on the source/drain pattern; removing the main gate dummy pattern and the subgate dummy patterns; and forming a gate electrode in a space where the main gate dummy pattern and the subgate dummy patterns are removed.
