Samsung electronics co., ltd. (20240136375). IMAGE SENSOR simplified abstract
Contents
- 1 IMAGE SENSOR
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 IMAGE SENSOR - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
IMAGE SENSOR
Organization Name
Inventor(s)
Masato Fujita of Suwon-si (KR)
IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136375 titled 'IMAGE SENSOR
Simplified Explanation
The image sensor described in the patent application includes a semiconductor substrate with a photoelectric conversion region, a floating diffusion region, and a vertical transfer gate for transferring photocharges collected in the photoelectric conversion region to the floating diffusion region.
- The image sensor comprises a semiconductor substrate with a photoelectric conversion region and a floating diffusion region.
- A vertical transfer gate on the semiconductor substrate's first surface transfers photocharges from the photoelectric conversion region to the floating diffusion region.
- The vertical transfer gate includes a first and second vertical electrode portion connected to the photoelectric conversion region.
Potential Applications
This technology could be used in digital cameras, smartphones, and other devices that require high-quality image sensors for capturing photos and videos.
Problems Solved
1. Improved efficiency in transferring photocharges within the image sensor. 2. Enhanced image quality and sensitivity in low-light conditions.
Benefits
1. Higher resolution and better image quality. 2. Increased sensitivity for capturing clear images in various lighting conditions. 3. Improved performance and efficiency of image sensors.
Potential Commercial Applications
Optimizing Image Sensor Technology for Enhanced Photography
Possible Prior Art
Prior art may include similar patents related to image sensor technology, vertical transfer gates, and photoelectric conversion regions in semiconductor substrates.
Unanswered Questions
How does this technology compare to existing image sensor technologies in terms of performance and efficiency?
The article does not provide a direct comparison with existing image sensor technologies to evaluate its advantages and limitations.
What are the potential challenges or limitations of implementing this technology in mass-produced devices?
The article does not address the potential challenges or limitations that may arise when integrating this technology into commercial products on a large scale.
Original Abstract Submitted
an image sensor, comprising a semiconductor substrate having first and second surfaces opposed to each other, a photoelectric conversion region in the semiconductor substrate, a floating diffusion region adjacent to the first surface in the semiconductor substrate, and a vertical transfer gate on the first surface of the semiconductor substrate, and extending in a direction perpendicular to the first surface and connected to the photoelectric conversion region. the vertical transfer gate may transfer photocharges collected in the photoelectric conversion region to the floating diffusion region. the vertical transfer gate includes a first vertical electrode portion and a second vertical electrode portion extending from the first surface of the semiconductor substrate in the vertical direction, and connected to the photoelectric conversion region, respectively.
