Samsung electronics co., ltd. (20240136356). SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Byeol Hae Eom of Suwon-si (KR)
Byung Ha Choi of Suwon-si (KR)
Won Cheol Jeong of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136356 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes multiple element separation structures and active patterns, as well as gate electrodes. Here is a simplified explanation of the patent application:
- The semiconductor device has three element separation structures arranged in a specific order.
- There are two active patterns extending in a certain direction, each separated by an element separation structure.
- A first gate electrode is located on the first active pattern, while multiple second gate electrodes are on the second active pattern.
- The width of the first active pattern is greater than the width of the second active pattern.
Potential Applications
This technology could be applied in:
- Advanced semiconductor devices
- High-performance electronics
Problems Solved
This technology helps in:
- Enhancing device performance
- Improving efficiency of electronic components
Benefits
The benefits of this technology include:
- Increased functionality
- Better control over electronic devices
Potential Commercial Applications
This technology could be used in:
- Consumer electronics
- Telecommunications industry
Possible Prior Art
There is no prior art known at this time.
Unanswered Questions
How does this technology impact power consumption in electronic devices?
This article does not address the specific impact on power consumption.
Are there any limitations to the scalability of this technology?
The scalability limitations of this technology are not discussed in the article.
Original Abstract Submitted
a semiconductor device includes a first element separation structure, a second element separation structure, and a third element separation structure sequentially disposed along a first direction and extending in a second direction intersecting the first direction; a first active pattern extending in the first direction between the first element separation structure and the second element separation structure; a second active pattern extending in the first direction between the second element separation structure and the third element separation structure and separated from the first active pattern by the second element separation structure; a first gate electrode extending in the second direction on the first active pattern; and a plurality of second gate electrodes extending in the second direction on the second active pattern, wherein a width of the first active pattern in the second direction is greater than a width of the second active pattern in the second direction.
