Samsung electronics co., ltd. (20240136354). INTEGRATED CIRCUIT DEVICES INCLUDING STACKED FIELD EFFECT TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract
Contents
- 1 INTEGRATED CIRCUIT DEVICES INCLUDING STACKED FIELD EFFECT TRANSISTORS AND METHODS OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT DEVICES INCLUDING STACKED FIELD EFFECT TRANSISTORS AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
INTEGRATED CIRCUIT DEVICES INCLUDING STACKED FIELD EFFECT TRANSISTORS AND METHODS OF FORMING THE SAME
Organization Name
Inventor(s)
KEUMSEOK Park of Slingerlands NY (US)
SOOYOUNG Park of Halfmoon NY (US)
JAEJIK Baek of Watervliet NY (US)
KANG-ILL Seo of Springfield VA (US)
INTEGRATED CIRCUIT DEVICES INCLUDING STACKED FIELD EFFECT TRANSISTORS AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136354 titled 'INTEGRATED CIRCUIT DEVICES INCLUDING STACKED FIELD EFFECT TRANSISTORS AND METHODS OF FORMING THE SAME
Simplified Explanation
The abstract describes integrated circuit devices with a transistor stack including a first transistor and a second transistor on top of the first transistor. The first transistor has source/drain regions, a channel region, and a gate structure.
- The integrated circuit device includes a substrate and a transistor stack.
- The transistor stack consists of a first transistor and a second transistor.
- The first transistor is positioned between the substrate and the second transistor.
- The first transistor comprises source/drain regions, a channel region, and a gate structure.
- The lower surface of the first source/drain region is higher than the lower surface of the first gate structure relative to the substrate.
Potential Applications
This technology could be applied in the manufacturing of advanced integrated circuits for various electronic devices such as smartphones, computers, and IoT devices.
Problems Solved
This technology helps in improving the performance and efficiency of integrated circuits by optimizing the transistor stack design.
Benefits
The benefits of this technology include enhanced functionality, increased speed, and reduced power consumption in integrated circuit devices.
Potential Commercial Applications
Potential commercial applications of this technology could be in the semiconductor industry for producing high-performance integrated circuits for consumer electronics and industrial applications.
Possible Prior Art
One possible prior art could be the use of similar transistor stack structures in existing integrated circuit devices to improve performance and functionality.
Unanswered Questions
How does this technology compare to existing transistor stack designs in terms of performance and efficiency?
The article does not provide a direct comparison with existing transistor stack designs to evaluate the performance and efficiency improvements.
What are the specific manufacturing processes involved in forming the transistor stack described in the patent application?
The article does not detail the specific manufacturing processes used to form the transistor stack, which could be crucial for understanding the practical implementation of the technology.
Original Abstract Submitted
integrated circuit devices and methods of forming the same are provided. an integrated circuit device may include a substrate and a transistor stack on the substrate, the transistor stack including a first transistor and a second transistor on the first transistor. the first transistor may be between the substrate and the second transistor and the first transistor may include first and second source/drain regions, a first channel region between the first and second source/drain regions, and a first gate structure on the first channel region. a lower surface of the first source/drain region may be higher than a lower surface of the first gate structure relative to the substrate.
