Samsung electronics co., ltd. (20240136232). METHOD OF EXTRACTING PROPERTIES OF A LAYER ON A WAFER simplified abstract
Contents
- 1 METHOD OF EXTRACTING PROPERTIES OF A LAYER ON A WAFER
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF EXTRACTING PROPERTIES OF A LAYER ON A WAFER - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
METHOD OF EXTRACTING PROPERTIES OF A LAYER ON A WAFER
Organization Name
Inventor(s)
METHOD OF EXTRACTING PROPERTIES OF A LAYER ON A WAFER - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136232 titled 'METHOD OF EXTRACTING PROPERTIES OF A LAYER ON A WAFER
Simplified Explanation
The method described in the patent application involves using electromagnetic waves to extract properties of a layer on a wafer. By emitting electromagnetic waves to the lower surface of the wafer, detecting the waves that pass through and are reflected from the target layer, and separating the pulses of the waves, property data of the target layer can be obtained.
- Emit electromagnetic waves to the lower surface of the wafer
- Detect the first electromagnetic wave passing through the target layer and the second electromagnetic wave reflected from the target layer
- Obtain data including information about the first and second electromagnetic waves
- Separate the pulses of the waves in the data
- Obtain property data of the target layer
Potential Applications
This technology could be applied in the semiconductor industry for quality control and characterization of thin film layers on wafers.
Problems Solved
This technology solves the problem of accurately and non-destructively extracting properties of thin film layers on wafers.
Benefits
The benefits of this technology include improved efficiency in analyzing wafer layers, increased accuracy in property extraction, and non-destructive testing capabilities.
Potential Commercial Applications
- Semiconductor manufacturing
- Thin film characterization services
- Quality control in wafer production
Possible Prior Art
One possible prior art could be the use of similar methods in the field of non-destructive testing and analysis of materials.
Unanswered Questions
How does this technology compare to existing methods for wafer layer analysis?
This article does not provide a direct comparison to existing methods for wafer layer analysis. It would be helpful to know the advantages and disadvantages of this technology compared to traditional techniques.
What are the limitations of this method in terms of the types of layers it can analyze?
The article does not address the limitations of this method in terms of the types of layers it can analyze. It would be important to understand if there are any restrictions on the materials or thicknesses of layers that can be effectively analyzed using this technology.
Original Abstract Submitted
provided is a method of extracting properties of a layer on a wafer, the method including emitting electromagnetic waves to a lower surface of the wafer, detecting a first electromagnetic wave, that passes through a target layer on an upper surface of the wafer, and a second electromagnetic wave, that is reflected from the target layer, among the electromagnetic waves to obtain data including information about the first electromagnetic wave and the second electromagnetic wave, and separating a first pulse of the first electromagnetic wave and a second pulse of the second electromagnetic wave from each other in the data and obtaining property data of the target layer.
