View source for Samsung electronics co., ltd. (20240136232). METHOD OF EXTRACTING PROPERTIES OF A LAYER ON A WAFER simplified abstract

=METHOD OF EXTRACTING PROPERTIES OF A LAYER ON A WAFER=


==Organization Name==

[[:Category:samsung electronics co., ltd.|samsung electronics co., ltd.]]


[[Category:samsung electronics co., ltd.]]

==Inventor(s)==

[[:Category:Inkeun Baek of Suwon-si (KR)|Inkeun Baek of Suwon-si (KR)]][[Category:Inkeun Baek of Suwon-si (KR)]]

[[:Category:Suhwan Park of Suwon-si (KR)|Suhwan Park of Suwon-si (KR)]][[Category:Suhwan Park of Suwon-si (KR)]]

[[:Category:Ikseon Jeon of Suwon-si (KR)|Ikseon Jeon of Suwon-si (KR)]][[Category:Ikseon Jeon of Suwon-si (KR)]]

[[:Category:Namil Koo of Suwon-si (KR)|Namil Koo of Suwon-si (KR)]][[Category:Namil Koo of Suwon-si (KR)]]

[[:Category:Ingi Kim of Suwon-si (KR)|Ingi Kim of Suwon-si (KR)]][[Category:Ingi Kim of Suwon-si (KR)]]

[[:Category:Jaeho Kim of Suwon-si (KR)|Jaeho Kim of Suwon-si (KR)]][[Category:Jaeho Kim of Suwon-si (KR)]]

[[:Category:Junbum Park of Suwon-si (KR)|Junbum Park of Suwon-si (KR)]][[Category:Junbum Park of Suwon-si (KR)]]

[[:Category:Sunhong Jun of Suwon-si (KR)|Sunhong Jun of Suwon-si (KR)]][[Category:Sunhong Jun of Suwon-si (KR)]]

==METHOD OF EXTRACTING PROPERTIES OF A LAYER ON A WAFER - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240136232 titled 'METHOD OF EXTRACTING PROPERTIES OF A LAYER ON A WAFER

==Simplified Explanation==

The method described in the patent application involves using electromagnetic waves to extract properties of a layer on a wafer. By emitting electromagnetic waves to the lower surface of the wafer, detecting the waves that pass through and are reflected from the target layer, and separating the pulses of the waves, property data of the target layer can be obtained.

* Emit electromagnetic waves to the lower surface of the wafer
* Detect the first electromagnetic wave passing through the target layer and the second electromagnetic wave reflected from the target layer
* Obtain data including information about the first and second electromagnetic waves
* Separate the pulses of the waves in the data
* Obtain property data of the target layer

== Potential Applications ==
This technology could be applied in the semiconductor industry for quality control and characterization of thin film layers on wafers.

== Problems Solved ==
This technology solves the problem of accurately and non-destructively extracting properties of thin film layers on wafers.

== Benefits ==
The benefits of this technology include improved efficiency in analyzing wafer layers, increased accuracy in property extraction, and non-destructive testing capabilities.

== Potential Commercial Applications ==
* Semiconductor manufacturing
* Thin film characterization services
* Quality control in wafer production

== Possible Prior Art ==
One possible prior art could be the use of similar methods in the field of non-destructive testing and analysis of materials.

=== Unanswered Questions ===

=== How does this technology compare to existing methods for wafer layer analysis? ===
This article does not provide a direct comparison to existing methods for wafer layer analysis. It would be helpful to know the advantages and disadvantages of this technology compared to traditional techniques.

=== What are the limitations of this method in terms of the types of layers it can analyze? ===
The article does not address the limitations of this method in terms of the types of layers it can analyze. It would be important to understand if there are any restrictions on the materials or thicknesses of layers that can be effectively analyzed using this technology.


==Original Abstract Submitted==

provided is a method of extracting properties of a layer on a wafer, the method including emitting electromagnetic waves to a lower surface of the wafer, detecting a first electromagnetic wave, that passes through a target layer on an upper surface of the wafer, and a second electromagnetic wave, that is reflected from the target layer, among the electromagnetic waves to obtain data including information about the first electromagnetic wave and the second electromagnetic wave, and separating a first pulse of the first electromagnetic wave and a second pulse of the second electromagnetic wave from each other in the data and obtaining property data of the target layer.



[[Category:H01L21/66]]
[[Category:G01N21/95]]