Samsung electronics co., ltd. (20240136230). METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136230 titled 'METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
Simplified Explanation
The method of manufacturing a semiconductor device involves forming a gate insulation layer on a substrate with first and second regions, followed by the formation of a first gate electrode layer on the gate insulation layer in both regions. A first sacrificial layer pattern is then formed on the first gate electrode layer in the second region. Next, a second gate electrode layer is formed on the first gate electrode layer in the first region and on the first sacrificial layer pattern in the second region. The second gate electrode layer and the first sacrificial layer pattern in the second region are removed to create a first gate electrode in the first region and a second gate electrode in the second region.
- Gate insulation layer formed on substrate
- First and second gate electrode layers stacked on each other in the first region
- First sacrificial layer pattern formed on first gate electrode layer in the second region
- Second gate electrode layer formed on first gate electrode layer in the first region and first sacrificial layer pattern in the second region
- Removal of second gate electrode layer and first sacrificial layer pattern in the second region to form first and second gate electrodes
Potential Applications
The technology can be applied in the manufacturing of various semiconductor devices, such as transistors and integrated circuits.
Problems Solved
This method solves the problem of efficiently forming gate electrodes in different regions of a semiconductor device.
Benefits
The benefits of this technology include improved manufacturing processes, increased device performance, and enhanced reliability of semiconductor devices.
Potential Commercial Applications
This innovative method can be utilized in the production of advanced electronic devices for various industries, including consumer electronics, telecommunications, and automotive.
Possible Prior Art
One possible prior art could be the traditional methods of forming gate electrodes in semiconductor devices, which may not be as efficient or precise as the method described in this patent application.
Unanswered Questions
How does this method compare to existing techniques for forming gate electrodes in semiconductor devices?
This method offers a more efficient and precise way of forming gate electrodes in different regions of a semiconductor device compared to traditional techniques. It allows for the creation of stacked gate electrode layers, which can improve device performance and reliability.
What are the specific materials and processes used in this method of manufacturing semiconductor devices?
The abstract does not provide detailed information on the specific materials and processes used in this method. Further research or examination of the full patent application would be needed to answer this question accurately.
Original Abstract Submitted
a method of manufacturing a semiconductor device includes forming a gate insulation layer on a substrate having first and second regions. a first gate electrode layer is formed on the gate insulation layer in the first and second regions. a first sacrificial layer pattern is formed on the first gate electrode layer in the second region. a second gate electrode layer is formed on the first gate electrode layer in the first region and the first sacrificial layer pattern in the second region. the second gate electrode layer and the first sacrificial layer pattern in the second region are removed to form a first gate electrode including the gate insulation layer, the first gate electrode layer and the second gate electrode layers stacked on each other in the first region, and a second gate electrode including the first gate electrode layer on the gate insulation layer in the second region.
