Samsung electronics co., ltd. (20240135977). OPERATING METHOD OF MEMORY CONTROLLER, AND MEMORY DEVICE simplified abstract

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OPERATING METHOD OF MEMORY CONTROLLER, AND MEMORY DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

HOON Shin of Suwon-si (KR)

JAEWOOK Lee of Seoul (KR)

DONGHWEE Kim of Suwon-si (KR)

RIHAE Park of Seoul (KR)

OPERATING METHOD OF MEMORY CONTROLLER, AND MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240135977 titled 'OPERATING METHOD OF MEMORY CONTROLLER, AND MEMORY DEVICE

Simplified Explanation

The abstract describes a memory device and an operating method of a memory controller that involves determining when a not operation for data of a cell is to be performed, forming reference voltages in a bit line connected to the cell, and sensing inversion data based on the voltages formed.

  • Determining when a not operation for data of a cell is to be performed
  • Forming reference voltages in a bit line connected to the cell
  • Sensing inversion data based on the voltages formed

Potential Applications

This technology could be applied in:

  • Memory devices
  • Data storage systems
  • Computer hardware

Problems Solved

This technology helps in:

  • Efficient data processing
  • Improved memory operations
  • Enhanced data storage capabilities

Benefits

The benefits of this technology include:

  • Faster data processing speeds
  • Increased memory efficiency
  • Enhanced data reliability

Potential Commercial Applications

Potential commercial applications of this technology could be seen in:

  • Semiconductor industry
  • Data centers
  • Consumer electronics

Possible Prior Art

One possible prior art for this technology could be:

  • Existing memory controllers with similar functionalities

Unanswered Questions

1. How does this technology compare to existing memory controllers in terms of performance and efficiency? 2. What are the specific technical specifications and requirements for implementing this technology in practical applications?


Original Abstract Submitted

a memory device and an operating method of a memory controller are described in which the operating method includes determining that a not operation for data of a cell is to be performed by the memory device; forming, in a bit line connected to the cell, a reference voltage between a first voltage corresponding to the data and a second voltage corresponding to inversion data of the data; forming, in the bit line, a third voltage between the second voltage and the reference voltage by connecting the bit line and a bit line bar; forming the reference voltage in the bit line bar; and sensing the inversion data based on the third voltage formed in the bit line and the reference voltage formed in the bit line bar, wherein the inversion data comprises an output of the not operation for the data of the cell.