Samsung electronics co., ltd. (20240135131). INTERNAL VOLTAGE GENERATION CIRCUIT OF SMART CARD AND SMART CARD INCLUDING THE SAME simplified abstract

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INTERNAL VOLTAGE GENERATION CIRCUIT OF SMART CARD AND SMART CARD INCLUDING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

Eunsang Jang of Hwaseong-si (KR)

Junho Kim of Seoul (KR)

Inhyuk Kim of Hanam-si (KR)

INTERNAL VOLTAGE GENERATION CIRCUIT OF SMART CARD AND SMART CARD INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240135131 titled 'INTERNAL VOLTAGE GENERATION CIRCUIT OF SMART CARD AND SMART CARD INCLUDING THE SAME

Simplified Explanation

The abstract describes an internal voltage generation circuit for a smart card that enables fingerprint authentication. The circuit includes various components such as contact switches, a switched capacitor converter, and a bidirectional switched capacitor converter.

  • The first contact switch directs a contact voltage to a first node based on a switching enable signal in contact mode.
  • The second contact switch directs the contact voltage to a second node based on a different switching enable signal in contact mode.
  • The bidirectional switched capacitor converter adjusts the driving voltages of the nodes to provide the necessary voltages for different modes of operation.

Potential Applications

The technology described in this patent application could be applied in various smart card systems that require fingerprint authentication, such as access control systems, payment cards, and identification cards.

Problems Solved

This technology solves the problem of generating internal voltages for fingerprint authentication in a smart card efficiently and effectively. It also addresses the need for secure and reliable authentication methods in smart card systems.

Benefits

The benefits of this technology include enhanced security through fingerprint authentication, improved user experience by eliminating the need for external power sources, and increased versatility in smart card applications.

Potential Commercial Applications

The technology could be commercialized in industries such as banking, government, healthcare, and transportation for secure access control, payment processing, identity verification, and more.

Possible Prior Art

One possible prior art for this technology could be existing smart card systems that use external power sources for fingerprint authentication, which may not be as efficient or secure as the internal voltage generation circuit described in this patent application.

Unanswered Questions

How does this technology compare to other methods of fingerprint authentication in smart cards?

This article does not provide a direct comparison with other methods of fingerprint authentication in smart cards, such as optical sensors or capacitive sensors.

What are the potential limitations or challenges in implementing this technology in mass-produced smart cards?

The article does not address the potential limitations or challenges in mass-producing smart cards with this internal voltage generation circuit, such as cost, size constraints, or compatibility with existing card readers.


Original Abstract Submitted

an internal voltage generation circuit of a smart card to perform fingerprint authentication and a smart card includes a first contact switch, a second contact switch, a switched capacitor converter and a bidirectional switched capacitor converter. the first contact switch selectively switches a contact voltage to a first node based on a first switching enable signal, in a contact mode. the second contact switch selectively switches the contact voltage to a second node based on a second switching enable signal, in the contact mode. the bidirectional switched capacitor converter steps down a first driving voltage of the first node to provide a second voltage to the second node in the contactless mode and either steps down the first driving voltage or boosts a second driving voltage of the second node based on a level of the contact voltage to provide a boosted voltage to the first node in the contact mode.