Samsung electronics co., ltd. (20240133683). OVERLAY MEASURING METHOD AND SYSTEM, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME simplified abstract
Contents
- 1 OVERLAY MEASURING METHOD AND SYSTEM, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 OVERLAY MEASURING METHOD AND SYSTEM, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 What is the cost-effectiveness of implementing this technology in semiconductor manufacturing processes?
- 1.11 How does this technology compare to existing overlay measurement methods in terms of accuracy and efficiency?
- 1.12 Original Abstract Submitted
OVERLAY MEASURING METHOD AND SYSTEM, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME
Organization Name
Inventor(s)
Seungyoon Lee of Suwon-si (KR)
OVERLAY MEASURING METHOD AND SYSTEM, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240133683 titled 'OVERLAY MEASURING METHOD AND SYSTEM, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME
Simplified Explanation
The abstract describes a method for measuring overlay in a semiconductor manufacturing process using an overlay mark with programmed values, scanning it with an electron beam, and analyzing the resulting voltage contrast image to determine overlay.
- Overlay measurement method using an overlay mark with programmed values
- Scanning the overlay mark with an electron beam to obtain a voltage contrast image
- Analyzing the voltage contrast image data to obtain a defect function related to overlay values
- Performing self-cross correlation on the defect function to determine overlay
Potential Applications
The technology can be applied in the semiconductor industry for precise overlay measurements in the manufacturing process.
Problems Solved
This technology solves the problem of accurately measuring overlay in semiconductor manufacturing, which is crucial for ensuring the quality and performance of integrated circuits.
Benefits
The benefits of this technology include improved accuracy in overlay measurements, leading to better quality control and higher yield in semiconductor production.
Potential Commercial Applications
The technology can be commercially applied in semiconductor fabrication facilities to enhance the quality control processes and optimize production efficiency.
Possible Prior Art
One possible prior art could be the use of electron beam scanning for defect analysis in semiconductor manufacturing processes.
Unanswered Questions
What is the cost-effectiveness of implementing this technology in semiconductor manufacturing processes?
The cost-effectiveness of implementing this technology would depend on factors such as the initial investment required, the potential increase in production efficiency, and the overall impact on the quality of the final products.
How does this technology compare to existing overlay measurement methods in terms of accuracy and efficiency?
Comparing this technology to existing methods would provide insights into its advantages and limitations, helping to determine its potential for widespread adoption in the semiconductor industry.
Original Abstract Submitted
in an overlay measurement method, an overlay mark having programmed overlay values is provided. the overlay mark is scanned with an electron beam to obtain a voltage contrast image. a defect function that changes according to the overlay value is obtained from voltage contrast image data. self-cross correlation is performed on the defect function to determine an overlay.
