Samsung electronics co., ltd. (20240130133). VERTICAL NONVOLATILE MEMORY DEVICE HAVING HYDROGEN DIFFUSION BARRIER LAYER AND MANUFACTURING METHOD THEREOF simplified abstract
Contents
- 1 VERTICAL NONVOLATILE MEMORY DEVICE HAVING HYDROGEN DIFFUSION BARRIER LAYER AND MANUFACTURING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 VERTICAL NONVOLATILE MEMORY DEVICE HAVING HYDROGEN DIFFUSION BARRIER LAYER AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
VERTICAL NONVOLATILE MEMORY DEVICE HAVING HYDROGEN DIFFUSION BARRIER LAYER AND MANUFACTURING METHOD THEREOF
Organization Name
Inventor(s)
Seongpil Chang of Suwon-si (KR)
Jaeduk Lee of Seongnam-si (KR)
VERTICAL NONVOLATILE MEMORY DEVICE HAVING HYDROGEN DIFFUSION BARRIER LAYER AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240130133 titled 'VERTICAL NONVOLATILE MEMORY DEVICE HAVING HYDROGEN DIFFUSION BARRIER LAYER AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The abstract describes a vertical nonvolatile memory device with various layers including hydrogen diffusion barrier layers and insulating layers.
- Memory device with peripheral circuit portion, hydrogen diffusion barrier layers, insulating layers, common source line layer, and memory cell stack structure.
- Vertical nonvolatile memory device designed for efficient data storage and retrieval.
- Utilizes hydrogen diffusion barrier layers to protect the memory cell stack structure.
- Common source line layer facilitates communication within the memory device.
- Overall design aims to enhance the performance and reliability of the memory device.
Potential Applications
The technology can be applied in various electronic devices such as smartphones, tablets, laptops, and solid-state drives for data storage purposes.
Problems Solved
This technology addresses the challenges of data storage in electronic devices by providing a reliable and efficient vertical nonvolatile memory device.
Benefits
The vertical nonvolatile memory device offers improved performance, reliability, and data storage capacity compared to traditional memory devices.
Potential Commercial Applications
The technology can be utilized in the consumer electronics industry for manufacturing high-performance electronic devices with enhanced memory capabilities.
Possible Prior Art
One possible prior art for this technology could be the development of other types of nonvolatile memory devices with different structures and materials.
What are the specific materials used in the memory cell stack structure?
The article does not specify the exact materials used in the memory cell stack structure.
How does the memory cell driving circuit function within the peripheral circuit portion?
The article does not provide details on the specific operation of the memory cell driving circuit within the peripheral circuit portion.
Original Abstract Submitted
a vertical nonvolatile memory device may include a peripheral circuit portion including a memory cell driving circuit and connection wiring; a first hydrogen diffusion barrier layer above the peripheral circuit portion; a first insulating layer above the first hydrogen diffusion barrier layer; a common source line layer above the first insulating layer; a second hydrogen diffusion barrier layer above the first insulating layer; and a memory cell stack structure above the common source line layer and the second hydrogen diffusion barrier layer.
