Samsung electronics co., ltd. (20240130127). SEMICONDUCTOR MEMORY DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR MEMORY DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME
Organization Name
Inventor(s)
Beyong Hyun Koh of Suwon-si (KR)
Hyun Gun Jang of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240130127 titled 'SEMICONDUCTOR MEMORY DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME
Simplified Explanation
The semiconductor memory device described in the abstract includes a unique structure with multiple layers and channel structures. Here are some key points to explain the innovation:
- The device includes a substrate, a mold structure, and channel structures within the mold.
- There are source and source sacrificial layers between the substrate and mold, with a source support layer on top.
- The source support layer has different portions at varying vertical distances from the substrate and source layer.
Potential Applications
This technology could be applied in:
- Memory storage devices
- Semiconductor manufacturing
Problems Solved
This innovation addresses:
- Improving memory device performance
- Enhancing semiconductor manufacturing processes
Benefits
The benefits of this technology include:
- Increased memory storage capacity
- Enhanced device reliability
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- Data storage solutions
Possible Prior Art
One possible prior art for this technology could be:
- Existing semiconductor memory devices with different layer structures
Unanswered Questions
How does this technology compare to existing memory devices in terms of performance and efficiency?
This article does not provide a direct comparison with existing memory devices.
What specific manufacturing processes are required to implement this technology?
The article does not detail the specific manufacturing processes involved in implementing this technology.
Original Abstract Submitted
a semiconductor memory device comprises a substrate; a mold structure on the substrate; a plurality of channel structures extending in the mold structure; a source layer and a source sacrificial layer between the substrate and the mold structure, wherein the source sacrificial layer is spaced apart from the source layer; and a source support layer on the source layer and the source sacrificial layer, wherein the source support layer is between the source layer and the source sacrificial layer, wherein an upper surface of the source support layer includes first and second portions extending parallel to the substrate, and a third portion that connects the first and second portions, wherein a vertical distance from an upper surface of the source layer to the first portion is smaller than a vertical distance from an upper surface of the substrate to the second portion.
