Samsung electronics co., ltd. (20240130123). SEMICONDUCTOR DEVICE, ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME simplified abstract

SEMICONDUCTOR DEVICE, ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

Yejin Park of Suwon-si (KR)

Seung Yoon Kim of Suwon-si (KR)

Heesuk Kim of Suwon-si (KR)

Hyeongjin Kim of Suwon-si (KR)

Sehee Jang of Suwon-si (KR)

Minsoo Shin of Suwon-si (KR)

Seungjun Shin of Suwon-si (KR)

Sanghun Chun of Suwon-si (KR)

Jeehoon Han of Suwon-si (KR)

Jae-Hwang Sim of Suwon-si (KR)

Jongseon Ahn of Suwon-si (KR)

SEMICONDUCTOR DEVICE, ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240130123 titled 'SEMICONDUCTOR DEVICE, ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME

Simplified Explanation

The semiconductor device described in the patent application includes a unique structure with a first gate stack, memory channel structure, through contact, and connection contact. The memory portion is narrower than the through portion and connection portion.

• First gate stack structure with alternating dielectric and conductive patterns
• Memory channel structure penetrating the gate stack
• Through contact at the same level as the memory portion
• Connection contact at the same level as the memory and through portions

Potential Applications

This technology could be applied in the development of advanced memory devices, such as non-volatile memory or flash memory, for electronic systems.

Problems Solved

This innovation addresses the challenge of increasing memory density while maintaining efficient connectivity within semiconductor devices.

Benefits

The benefits of this technology include higher memory capacity, improved performance, and enhanced reliability in electronic systems.

Potential Commercial Applications

One potential commercial application of this technology could be in the production of high-density memory chips for consumer electronics, data storage devices, and computing systems.

Possible Prior Art

Prior art in the field of semiconductor device fabrication may include similar structures involving gate stacks, memory channels, and connection contacts, but the specific configuration described in this patent application appears to be novel.

How does this technology compare to existing memory device structures on the market?

This article does not provide a direct comparison to existing memory device structures, leaving the reader to wonder about the specific advantages and differences between this innovation and current technologies.

What are the potential limitations or challenges in implementing this technology in mass production?

The article does not address any potential challenges or limitations that may arise when scaling up the fabrication of semiconductor devices using this new structure, leaving room for speculation on the practicality and feasibility of large-scale production.

Original Abstract Submitted

disclosed are semiconductor devices, electronic systems including the same, and methods of fabricating the same. the semiconductor device comprises a first gate stack structure including a first dielectric pattern and a first conductive pattern that are alternately stacked with each other, a memory channel structure including a first memory portion that penetrates the first gate stack structure, a through contact including a first through portion at a level the same as a level of the first memory portion, and a connection contact including a first connection portion at a level the same as the level of the first memory portion and the level of the first through portion. a minimum width of the first memory portion is less than a minimum width of the first through portion and a minimum width of the first connection portion.