Samsung electronics co., ltd. (20240130111). GROUND-CONNECTED SUPPORTS WITH INSULARING SPACERS FOR SEMICONDUCTORMEMORY CAPACTITORS AND METHOD OF FABRICATING THE SAME simplified abstract

GROUND-CONNECTED SUPPORTS WITH INSULARING SPACERS FOR SEMICONDUCTORMEMORY CAPACTITORS AND METHOD OF FABRICATING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

Yoon Young Choi of Seoul (KR)

Seung Jin Kim of Hwaseong-si (KR)

Byung-Hyun Lee of Hwaseong-si (KR)

Sang Jae Park of Seoul (KR)

GROUND-CONNECTED SUPPORTS WITH INSULARING SPACERS FOR SEMICONDUCTORMEMORY CAPACTITORS AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240130111 titled 'GROUND-CONNECTED SUPPORTS WITH INSULARING SPACERS FOR SEMICONDUCTORMEMORY CAPACTITORS AND METHOD OF FABRICATING THE SAME

Simplified Explanation

A semiconductor device described in the patent application consists of a plurality of lower electrodes on a substrate, a first electrode support made of a metallic material between adjacent lower electrodes, a dielectric layer extending along profiles of the first electrode support and lower electrodes, and an upper electrode on the dielectric layer.

• The semiconductor device includes multiple lower electrodes on a substrate.
• A first electrode support, made of a metallic material, is positioned between adjacent lower electrodes.
• A dielectric layer covers the lower electrodes and the first electrode support, extending along their profiles.
• An upper electrode is placed on top of the dielectric layer.

Potential Applications

The technology described in this patent application could be applied in:

• Semiconductor manufacturing
• Electronics industry
• Energy storage devices

Problems Solved

This technology addresses issues related to:

• Improving semiconductor device performance
• Enhancing electrical conductivity
• Increasing device reliability

Benefits

The benefits of this technology include:

• Higher efficiency in semiconductor devices
• Improved durability and longevity
• Enhanced electrical properties

Potential Commercial Applications

The potential commercial applications of this technology could be seen in:

• Integrated circuits
• Power electronics
• Consumer electronics

Possible Prior Art

One possible prior art related to this technology is the use of similar electrode configurations in semiconductor devices for improved performance and reliability.

Unanswered Questions

How does this technology compare to existing semiconductor devices in terms of efficiency and reliability?

The article does not provide a direct comparison with existing semiconductor devices to evaluate the efficiency and reliability improvements offered by this technology.

What specific materials are used in the construction of the semiconductor device and how do they contribute to its performance?

The article does not detail the specific materials used in the construction of the semiconductor device and their individual roles in enhancing its performance.

Original Abstract Submitted

a semiconductor device may comprise: a plurality of lower electrodes which are on a substrate; a first electrode support which is between adjacent lower electrodes and comprises a metallic material; a dielectric layer which is on the lower electrodes and the first electrode support to extend along profiles of the first electrode support and each of the lower electrodes; and an upper electrode which is on the dielectric layer.