View source for Samsung electronics co., ltd. (20240126453). NON-VOLATILE MEMORY DEVICE, STORAGE DEVICE, OPERATING METHOD OF STORAGE CONTROLLER, AND OPERATING METHOD OF THE STORAGE DEVICE simplified abstract

=NON-VOLATILE MEMORY DEVICE, STORAGE DEVICE, OPERATING METHOD OF STORAGE CONTROLLER, AND OPERATING METHOD OF THE STORAGE DEVICE=


==Organization Name==

[[:Category:samsung electronics co., ltd.|samsung electronics co., ltd.]]


[[Category:samsung electronics co., ltd.]]

==Inventor(s)==

[[:Category:Hyojin Ahn of Suwon-si (KR)|Hyojin Ahn of Suwon-si (KR)]][[Category:Hyojin Ahn of Suwon-si (KR)]]

[[:Category:Seoyeong Lee of Suwon-si (KR)|Seoyeong Lee of Suwon-si (KR)]][[Category:Seoyeong Lee of Suwon-si (KR)]]

[[:Category:Hoon Jo of Suwon-si (KR)|Hoon Jo of Suwon-si (KR)]][[Category:Hoon Jo of Suwon-si (KR)]]

==NON-VOLATILE MEMORY DEVICE, STORAGE DEVICE, OPERATING METHOD OF STORAGE CONTROLLER, AND OPERATING METHOD OF THE STORAGE DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240126453 titled 'NON-VOLATILE MEMORY DEVICE, STORAGE DEVICE, OPERATING METHOD OF STORAGE CONTROLLER, AND OPERATING METHOD OF THE STORAGE DEVICE

==Simplified Explanation==

The operating method of a storage device involves obtaining points between threshold voltage distributions of memory cells, calculating voltage levels, classifying cells into coupling patterns, and performing read operations based on these patterns and voltage levels.

* Obtaining points between threshold voltage distributions of memory cells
* Calculating voltage levels using specific functions
* Classifying memory cells into coupling patterns based on adjacent cell groups
* Performing read operations based on coupling patterns and voltage levels

== Potential Applications ==
This technology could be applied in various storage devices such as solid-state drives, flash memory, and non-volatile memory systems.

== Problems Solved ==
This technology helps in improving the efficiency and accuracy of read operations in storage devices by classifying memory cells into different coupling patterns.

== Benefits ==
The benefits of this technology include enhanced performance, increased reliability, and improved data retrieval speed in storage devices.

== Potential Commercial Applications ==
Potential commercial applications of this technology include use in data centers, consumer electronics, automotive systems, and other devices requiring fast and reliable storage solutions.

== Possible Prior Art ==
One possible prior art in this field could be research on memory cell classification and read operation optimization in storage devices.

== Unanswered Questions ==

=== How does this technology impact the overall power consumption of storage devices? ===
The abstract does not provide information on how this technology affects the power consumption of storage devices.

=== Are there any limitations to the number of memory cells that can be classified into coupling patterns using this method? ===
The abstract does not address any limitations on the number of memory cells that can be classified into coupling patterns using this method.


==Original Abstract Submitted==

in some embodiments, an operating method of a storage device includes obtaining a plurality of points by searching for a first valley point between threshold voltage distributions of selection memory cells coupled to a selection word line of a plurality of word lines; calculating, using a first function, a first voltage level that corresponds to a first reference count value; calculating, using a second function, a second voltage level that corresponds to the first reference count value; classifying the selection memory cells into a plurality of coupling patterns according to an aggressor cell group of each of adjacent memory cells coupled to at least one adjacent word line adjacent to the selection word line; and performing a read operation, based on the plurality of coupling patterns of the selection memory cells, the first voltage level, and the second voltage level.



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