Samsung electronics co., ltd. (20240128310). SEMICONDUCTOR DEVICE HAVING SUPPORTER PATTERN simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE HAVING SUPPORTER PATTERN
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE HAVING SUPPORTER PATTERN - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE HAVING SUPPORTER PATTERN
Organization Name
Inventor(s)
Seung Jin Kim of Hwaseong-si (KR)
Sung Soo Yim of Hwasung-si (KR)
SEMICONDUCTOR DEVICE HAVING SUPPORTER PATTERN - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240128310 titled 'SEMICONDUCTOR DEVICE HAVING SUPPORTER PATTERN
Simplified Explanation
The method described in the patent application involves the manufacturing of a semiconductor device by stacking a mold layer and a supporter layer on a substrate, forming capacitor holes, filling them with lower electrodes, creating a supporter mask pattern with mask holes, and patterning the supporter layer to form supporter holes.
- The semiconductor device is manufactured by stacking layers on a substrate, forming capacitor holes, filling them with lower electrodes, and creating supporter mask patterns and holes.
- Each lower electrode has a pillar shape, and the mask holes are circular and located between four adjacent lower electrodes.
Potential Applications
This technology could be applied in the manufacturing of various semiconductor devices, such as memory chips, processors, and sensors.
Problems Solved
This method solves the problem of efficiently creating capacitor structures in semiconductor devices with precise patterning and alignment.
Benefits
The benefits of this technology include improved performance and reliability of semiconductor devices, as well as potentially reducing manufacturing costs.
Potential Commercial Applications
The potential commercial applications of this technology include the production of advanced semiconductor devices for consumer electronics, telecommunications, and automotive industries.
Possible Prior Art
One possible prior art could be a similar method of manufacturing semiconductor devices using different patterning techniques for creating capacitor structures.
Unanswered Questions
How does this method compare to existing techniques for manufacturing semiconductor devices with capacitor structures?
This article does not provide a direct comparison to existing techniques, leaving the reader to wonder about the advantages and disadvantages of this new method.
What are the specific dimensions and materials used in the manufacturing process described in the patent application?
The article does not delve into the specific dimensions and materials used in the manufacturing process, which could be crucial for understanding the feasibility and scalability of this technology.
Original Abstract Submitted
a method of manufacturing a semiconductor device includes sequentially stacking a mold layer and a supporter layer on a substrate, forming a plurality of capacitor holes passing through the mold layer and supporter layer, forming a plurality of lower electrodes filling the capacitor holes, forming a supporter mask pattern having a plurality of mask holes on the supporter layer and the lower electrodes, and forming a plurality of supporter holes by patterning the supporter layer. each of the plurality of lower electrodes has a pillar shape, and each of the mask holes is between four adjacent lower electrodes and has a circular shape.
