Samsung electronics co., ltd. (20240128161). INTEGRATED CIRCUIT DEVICES simplified abstract

INTEGRATED CIRCUIT DEVICES

Organization Name

samsung electronics co., ltd.

Inventor(s)

Sungmoon Lee of Suwon-si (KR)

Sangcheol Na of Suwon-si (KR)

Sora You of Suwon-si (KR)

Kyoungwoo Lee of Suwon-si (KR)

Minchan Gwak of Suwon-si (KR)

Youngwoo Kim of Suwon-si (KR)

Jinkyu Kim of Suwon-si (KR)

Seungmin Cha of Suwon-si (KR)

INTEGRATED CIRCUIT DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240128161 titled 'INTEGRATED CIRCUIT DEVICES

Simplified Explanation

The integrated circuit device described in the abstract includes a substrate with semiconductor patterns, a gate electrode, a source/drain region, a vertical power wiring layer with a liner structure, a first contact, and a back wiring structure.

• The device features a gate electrode surrounding semiconductor patterns on the substrate.
• A vertical power wiring layer with a liner structure is included for efficient power distribution.
• A first contact is placed on the source/drain region and the vertical power wiring layer.
• A back wiring structure on the second surface of the substrate is electrically connected to the vertical power wiring layer.

Potential Applications

The technology described in this patent application could be applied in the manufacturing of advanced integrated circuits for various electronic devices, such as smartphones, tablets, and computers.

Problems Solved

This technology addresses the need for improved power distribution and electrical connectivity in integrated circuit devices, enhancing their performance and reliability.

Benefits

The integrated circuit device with the described features offers enhanced power efficiency, reduced signal interference, and improved overall functionality.

Potential Commercial Applications

The technology could find commercial applications in the semiconductor industry for the production of high-performance integrated circuits for consumer electronics and other electronic devices.

Possible Prior Art

One possible prior art in this field could be the use of liner structures in semiconductor devices to improve electrical insulation and signal integrity.

How does this technology compare to existing power wiring solutions in terms of efficiency and performance?

The article does not provide a direct comparison between this technology and existing power wiring solutions in terms of efficiency and performance. Further research or testing may be needed to evaluate the advantages of this innovation over current solutions.

What are the potential challenges in implementing this technology on a large scale for mass production?

The article does not address the potential challenges in implementing this technology on a large scale for mass production. Factors such as cost, scalability, and compatibility with existing manufacturing processes could be significant considerations that need to be explored further.

Original Abstract Submitted

provided is an integrated circuit device including a substrate, a plurality of semiconductor patterns on a first surface of the substrate, a gate electrode extending in a first direction and surrounding the semiconductor patterns, a source/drain region disposed on one side of the gate electrode, a vertical power wiring layer extending in a second direction, a liner structure including a first liner and a second liner, the first liner disposed on a lower portion of a sidewall of the vertical power wiring layer and including a first insulating material, and the second liner disposed on an upper portion of the sidewall of the vertical power wiring layer and including a second insulating material, a first contact disposed on the source/drain region and the vertical power wiring layer, and a back wiring structure disposed on a second surface of the substrate and electrically connected to the vertical power wiring layer.