Samsung electronics co., ltd. (20240128056). PLASMA ETCHING APPARATUS AND OPERATING METHOD THEREOF simplified abstract
Contents
- 1 PLASMA ETCHING APPARATUS AND OPERATING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 PLASMA ETCHING APPARATUS AND OPERATING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
PLASMA ETCHING APPARATUS AND OPERATING METHOD THEREOF
Organization Name
Inventor(s)
PLASMA ETCHING APPARATUS AND OPERATING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240128056 titled 'PLASMA ETCHING APPARATUS AND OPERATING METHOD THEREOF
Simplified Explanation
The present disclosure describes a plasma etching apparatus and its operating methods, including a processing chamber, a plasma source generator, a bias generator, and an acoustic wave generator. The apparatus is designed to etch a wafer using plasma formed by plasma source and bias pulses, with the acoustic wave generator controlling the density of the reactive gas in the plasma.
- Processing chamber for receiving etching gas and etching wafers using plasma
- Plasma source generator for creating plasma source pulses
- Bias generator for generating bias pulses
- Acoustic wave generator for controlling reactive gas density in the plasma
Potential Applications
The technology can be applied in semiconductor manufacturing processes, specifically in plasma etching for microelectronics fabrication.
Problems Solved
This technology helps improve the precision and efficiency of plasma etching processes, leading to better quality and more reliable semiconductor devices.
Benefits
- Enhanced control over plasma etching parameters - Increased accuracy and repeatability in etching processes - Potential for higher throughput and yield in semiconductor production
Potential Commercial Applications
- Semiconductor manufacturing companies - Research institutions in the field of microelectronics
Possible Prior Art
Prior art may include other plasma etching apparatuses with similar components for controlling plasma parameters, but the specific use of an acoustic wave generator for gas density control may be novel.
Unanswered Questions
How does the acoustic wave generator impact the overall efficiency of the plasma etching process?
The acoustic wave generator's role in controlling gas density is clear, but its specific effects on process efficiency and quality could be further explored through experimentation and analysis.
What are the potential limitations or challenges in implementing this technology on an industrial scale?
While the benefits of the technology are evident, practical challenges such as scalability, cost-effectiveness, and integration with existing manufacturing processes may need to be addressed for widespread adoption.
Original Abstract Submitted
the present disclosure provides plasma etching apparatuses and operating methods of the plasma etching apparatuses. in some embodiments, a plasma etching apparatus includes a processing chamber, a plasma source generator, a bias generator, and an acoustic wave generator. the processing chamber is configured to receive etching gas, and to etch a wafer using plasma that has been formed according to a plasma source pulse and a bias pulse. the a plasma source generator is configured to generate the plasma source pulse. the bias generator is configured to generate the bias pulse. the acoustic wave generator is configured to generate an acoustic wave having a wavefront with a first direction parallel to the wafer and to control a density of a reactive gas of the plasma.
