Samsung electronics co., ltd. (20240128055). APPARATUS FOR PROCESSING PLASMA AND METHOD OF PROCESSING PLASMA AND MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME simplified abstract
APPARATUS FOR PROCESSING PLASMA AND METHOD OF PROCESSING PLASMA AND MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
Organization Name
Inventor(s)
Hyunhak Jeong of Suwon-si (KR)
APPARATUS FOR PROCESSING PLASMA AND METHOD OF PROCESSING PLASMA AND MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240128055 titled 'APPARATUS FOR PROCESSING PLASMA AND METHOD OF PROCESSING PLASMA AND MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
Simplified Explanation
The method described in the abstract involves manufacturing a semiconductor device by using plasma ions generated in a plasma chamber with the help of two power generators, one for generating a radio frequency (rf) signal and the other for generating a direct current (dc) bias signal. These signals are used to perform a plasma process on a layer on the wafer placed in the chamber.
- Explanation of the patent/innovation:
- Plasma chamber with two power generators for generating rf and dc bias signals - Rf signal has a sinusoidal waveform in an on state and off state - Dc bias signal has a non-sinusoidal waveform in an on state and off state - Signals are offset from each other to perform a plasma process on the wafer
Potential applications of this technology: - Semiconductor manufacturing - Thin film deposition - Surface modification processes
Problems solved by this technology: - Enhanced control over plasma processes - Improved uniformity and quality of semiconductor devices - Increased efficiency in manufacturing processes
Benefits of this technology: - Higher precision in plasma processing - Reduced defects in semiconductor devices - Cost-effective manufacturing solutions
Potential commercial applications of this technology: - Semiconductor industry - Electronics manufacturing - Research and development in materials science
Possible prior art: - Prior methods of plasma processing using single power generators - Traditional semiconductor manufacturing techniques
Unanswered questions: 1. What specific types of semiconductor devices can benefit the most from this technology? 2. How does the offset between the rf and dc bias signals impact the overall efficiency of the plasma process?
Original Abstract Submitted
a method of manufacturing a semiconductor device includes placing a wafer in a plasma chamber, the chamber including a first power generator configured to generate plasma ions in the chamber, and a second power generator configured to accelerate the plasma ions toward the wafer, generating a radio frequency (rf) signal having a repeated periodic sinusoidal waveform in an on state and a steady off state by the first power generator, and generating a direct current (dc) bias signal having a repeated periodic non-sinusoidal waveform in an on state and a steady off state by the second power generator. the rf signal and the dc bias signal are offset from each other. the method further includes performing a plasma process on a layer on the wafer, using the rf signal and dc bias signal.
