Samsung electronics co., ltd. (20240127865). CHARGE PUMP HAVING SWITCH CIRCUITS FOR BLOCKING LEAKAGE CURRENT DURING SUDDEN POWER-OFF, AND FLASH MEMORY INCLUDING THE SAME simplified abstract

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CHARGE PUMP HAVING SWITCH CIRCUITS FOR BLOCKING LEAKAGE CURRENT DURING SUDDEN POWER-OFF, AND FLASH MEMORY INCLUDING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

Yeji Shin of Suwon-si (KR)

TAE-HONG Kwon of Suwon-si (KR)

YOONJAE Lee of Suwon-si (KR)

Seokin Hong of Suwon-si (KR)

CHARGE PUMP HAVING SWITCH CIRCUITS FOR BLOCKING LEAKAGE CURRENT DURING SUDDEN POWER-OFF, AND FLASH MEMORY INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240127865 titled 'CHARGE PUMP HAVING SWITCH CIRCUITS FOR BLOCKING LEAKAGE CURRENT DURING SUDDEN POWER-OFF, AND FLASH MEMORY INCLUDING THE SAME

Simplified Explanation

The abstract describes a charge pump for a flash memory, consisting of a first stage pump and a second stage pump connected between different nodes to generate pumping voltages for the memory.

  • The charge pump includes a first switch circuit and a first pump circuit in the first stage pump to provide power supply voltage and generate pumping voltage, respectively.
  • The first switch circuit blocks current flow in sudden power-off events to protect the system.
  • The second stage pump further boosts the pumping voltage for efficient operation of the flash memory.

Potential Applications

The technology can be applied in various flash memory devices, such as solid-state drives, USB flash drives, and digital cameras.

Problems Solved

1. Efficient generation of pumping voltages for flash memory operation. 2. Protection against sudden power-off events to prevent damage to the system.

Benefits

1. Improved performance and reliability of flash memory devices. 2. Enhanced power management capabilities. 3. Increased data retention and transfer speeds.

Potential Commercial Applications

"Charge Pump Technology for Flash Memory Devices" can be utilized in the development of next-generation storage solutions for consumer electronics, automotive systems, and industrial applications.

Possible Prior Art

One possible prior art could be the use of charge pumps in memory devices for voltage boosting and power management. However, the specific configuration and protection mechanism described in this patent application may be novel and inventive.

Unanswered Questions

How does this technology impact the overall power consumption of flash memory devices?

The article does not provide specific details on the power efficiency of the charge pump system and its impact on the energy consumption of flash memory devices.

Are there any limitations or constraints in implementing this technology in different types of flash memory architectures?

The article does not address potential challenges or compatibility issues that may arise when integrating the charge pump technology into various flash memory designs.


Original Abstract Submitted

disclosed is a charge pump of a flash memory, which includes a first stage pump that is connected between an output terminal and a first pump node, and a second stage pump that is connected between the first pump node and a second pump node. the first stage pump includes a first switch circuit that is connected between a power terminal and the first pump node and provides a power supply voltage to the first pump node in response to a first stage signal, in a normal operation, and a first pump circuit that generates a first pumping voltage by using a voltage of the first pump node in response to a first clock signal and provides the first pumping voltage to the output terminal. the first switch circuit blocks a current flow from the first pump node to the power terminal in a sudden power-off event.