Samsung electronics co., ltd. (20240120274). SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jong Min Baek of Suwon-si (KR)
Moon Kyun Song of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240120274 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device with a unique structure involving fin-shaped patterns, source/drain patterns, buried conductive patterns, and contact connection vias.
- The first fin-shaped pattern extends in a second direction on the substrate.
- The first source/drain pattern is connected to the first fin-shaped pattern and has a decreasing width as it extends away from the substrate surface.
- A buried conductive pattern extends through the substrate and is connected to the first source/drain contact.
- A contact connection via is directly connected to the first source/drain contact and increases in width as it extends away from the substrate surface.
- A back wiring line on the second surface of the substrate is connected to the buried conductive pattern.
Potential Applications
The technology described in this patent application could be applied in the manufacturing of advanced semiconductor devices for various electronic applications, such as mobile devices, computers, and IoT devices.
Problems Solved
This technology solves the problem of optimizing the connection and wiring layout in semiconductor devices to improve performance and reliability.
Benefits
The benefits of this technology include enhanced connectivity, improved signal transmission, and potentially higher efficiency in semiconductor devices.
Potential Commercial Applications
The technology could be commercialized in the semiconductor industry for the production of high-performance integrated circuits and electronic components.
Possible Prior Art
One possible prior art for this technology could be the use of similar structures in previous semiconductor devices to optimize connectivity and signal transmission.
Unanswered Questions
What specific materials are used in the fabrication of the semiconductor device described in the patent application?
The patent application does not provide detailed information on the materials used in the fabrication process.
How does the unique structure of the semiconductor device impact its overall performance compared to traditional designs?
The patent application does not discuss the performance implications of the new structure in detail.
Original Abstract Submitted
a semiconductor device a first fin-shaped pattern provided at a first surface of a substrate and extending in a second direction, a first source/drain pattern disposed on the first fin-shaped pattern and connected thereto, a first source/drain contact disposed on the first source/drain pattern and connected thereto, a buried conductive pattern extending through the substrate and connected to the first source/drain contact, a contact connection via disposed between the first source/drain contact and the buried conductive pattern. the contact connection via is directly connected to the first source/drain contact and a back wiring line disposed on a second surface of the substrate and connected to the buried conductive pattern. a width of the contact connection via increases as the contact connection via extends away from the second surface. a width of the first source/drain contact decreases as the first source/drain contact extends away from the second surface of the substrate.
