Samsung electronics co., ltd. (20240120196). SEMICONDUCTOR DEVICES INCLUDING A SUPPORT PATTERN ON A LOWER ELECTRODE STRUCTURE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICES INCLUDING A SUPPORT PATTERN ON A LOWER ELECTRODE STRUCTURE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICES INCLUDING A SUPPORT PATTERN ON A LOWER ELECTRODE STRUCTURE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICES INCLUDING A SUPPORT PATTERN ON A LOWER ELECTRODE STRUCTURE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICES INCLUDING A SUPPORT PATTERN ON A LOWER ELECTRODE STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240120196 titled 'SEMICONDUCTOR DEVICES INCLUDING A SUPPORT PATTERN ON A LOWER ELECTRODE STRUCTURE
Simplified Explanation
The method described in the patent application involves manufacturing a semiconductor device by forming electrode holes, filling them with lower electrode pillars, etching a support layer to expose the top surface of the mold layer, removing the mold layer, and selectively forming lower electrode patterns on the sidewalls and top surfaces of the lower electrode pillars.
- Forming electrode holes by etching a mold structure on a substrate
- Filling the electrode holes with lower electrode pillars
- Etching the support layer to expose the top surface of the mold layer
- Removing the mold layer to expose the sidewalls of the lower electrode pillars
- Selectively forming lower electrode patterns on the sidewalls and top surfaces of the lower electrode pillars
Potential Applications
This technology can be applied in the manufacturing of various semiconductor devices, such as memory chips, processors, and sensors.
Problems Solved
This method solves the problem of efficiently forming electrode patterns on semiconductor devices with complex structures, improving their performance and reliability.
Benefits
The benefits of this technology include increased efficiency in manufacturing semiconductor devices, improved performance due to precise electrode patterning, and enhanced reliability of the devices.
Potential Commercial Applications
The potential commercial applications of this technology include the semiconductor industry, electronics manufacturing, and research institutions developing advanced semiconductor devices.
Possible Prior Art
One possible prior art for this technology could be the use of similar etching and patterning techniques in the semiconductor industry to create complex device structures.
Unanswered Questions
How does this method compare to traditional semiconductor manufacturing processes?
This article does not provide a direct comparison to traditional semiconductor manufacturing processes, leaving the reader to wonder about the specific advantages or differences this method offers.
What are the specific performance improvements achieved by using this method?
The article does not delve into the specific performance improvements achieved by using this method, leaving the reader curious about the quantitative benefits or enhancements in semiconductor device performance.
Original Abstract Submitted
a method of manufacturing a semiconductor device includes: forming electrode holes by etching a mold structure including a mold layer and a support layer which are stacked on a substrate; forming lower electrode pillars filling the electrode holes; etching a portion of the support layer between the lower electrode pillars to form a support pattern having a through-hole exposing a portion of a top surface of the mold layer; removing the mold layer through the through-hole to expose sidewalls of the lower electrode pillars; and selectively forming lower electrode patterns on the sidewalls and top surfaces of the lower electrode pillars.
