Samsung electronics co., ltd. (20240119984). SEMICONDUCTOR MEMORY DEVICES simplified abstract
Contents
- 1 SEMICONDUCTOR MEMORY DEVICES
SEMICONDUCTOR MEMORY DEVICES
Organization Name
Inventor(s)
Jaeho Hong of Hwaseong-si (KR)
Ilgweon Kim of Hwaseong-si (KR)
Hyeoungwon Seo of Yongin-si (KR)
Sungwon Yoo of Hwaseong-si (KR)
SEMICONDUCTOR MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240119984 titled 'SEMICONDUCTOR MEMORY DEVICES
Simplified Explanation
The semiconductor memory device described in the patent application includes a semiconductor substrate, a common source semiconductor layer doped with impurities of a first conductivity type, insulating layers, word line structures, a memory cell dielectric layer, and a memory cell structure with a channel layer and a drain layer.
- Semiconductor substrate
- Common source semiconductor layer doped with impurities of a first conductivity type
- Insulating layers and word line structures stacked alternately
- Memory cell dielectric layer penetrating insulating layers and word line structures
- Memory cell structure filling the channel hole
- Channel layer with memory cell dielectric layer and filling the channel hole
- Drain layer covering the upper surface of the channel layer
Potential Applications
The technology described in the patent application could be applied in:
- Memory devices
- Data storage systems
- Semiconductor manufacturing
Problems Solved
This technology helps in:
- Increasing memory cell density
- Improving memory cell performance
- Enhancing data storage capabilities
Benefits
The benefits of this technology include:
- Higher memory capacity
- Faster data access speeds
- More efficient semiconductor memory devices
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- Computer hardware
- Telecommunications industry
Possible Prior Art
One possible prior art for this technology could be:
- Previous semiconductor memory devices with similar memory cell structures and configurations
Unanswered Questions
How does this technology compare to existing memory cell structures in terms of performance and efficiency?
This article does not provide a direct comparison between this technology and existing memory cell structures. It would be beneficial to have data or studies showing the performance and efficiency differences between this innovation and current memory cell technologies.
What are the potential challenges or limitations of implementing this technology on a larger scale in commercial products?
The article does not address the challenges or limitations that may arise when scaling up this technology for commercial production. Understanding the potential obstacles in mass production and integration into existing systems is crucial for assessing the feasibility of widespread adoption.
Original Abstract Submitted
a semiconductor memory device according to the present inventive concept includes: a semiconductor substrate; a common source semiconductor layer doped with impurities of a first conductivity type on the semiconductor substrate; a plurality of insulating layers and a plurality of word line structures alternately stacked on the common source semiconductor layer; and a memory cell dielectric layer penetrating the plurality of insulating layers and the plurality of word line structures and covering an internal wall of a channel hole extending in a vertical direction, and a memory cell structure filling the channel hole. the memory cell structure includes a channel layer, which has the memory cell dielectric layer thereon and fills at least a portion of the channel hole, and a drain layer covering an upper surface of the channel layer, doped with impurities of a second conductivity type, and filling some of an upper portion of the channel hole.
