Samsung electronics co., ltd. (20240114765). QUANTUM DOT ELECTROLUMINESCENCE DEVICE simplified abstract

QUANTUM DOT ELECTROLUMINESCENCE DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

Yusaku Konishi of Yokohama (JP)

Takahiro Fujiyama of Yokohama (JP)

Fumiaki Kato of Yokohama (JP)

Keigo Furuta of Yokohama (JP)

Kiyohiko Tsutsumi of Suwon-si, Gyeonggi-do (KR)

Masashi Tsuji of Hwaseong-si, Gyeonggi-do (KR)

Takao Motoyama of Hwaseong-si, Gyeonggi-do (KR)

QUANTUM DOT ELECTROLUMINESCENCE DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240114765 titled 'QUANTUM DOT ELECTROLUMINESCENCE DEVICE

Simplified Explanation

The patent application describes a device with design film thicknesses to improve the uniformity of a light emitting surface in a quantum dot electroluminescence device. The device includes a hole transport layer, an electron transport layer, and a light emitting layer with a quantum dot having a core-shell structure.

• The device includes a hole transport layer with a polymer material and a low molecular material.
• The light emitting layer includes a quantum dot with a core-shell structure.
• The residual film ratio of the hole transport layer is greater than or equal to about 95%.

Potential Applications

This technology could be applied in the development of high-efficiency and long-lasting quantum dot electroluminescence devices for various lighting and display applications.

Problems Solved

This technology addresses the issue of non-uniformity of light emitting surfaces in quantum dot electroluminescence devices, improving luminous efficiency and light emitting life-span.

Benefits

The device provides good luminous efficiency and light emitting life-span, offering an excellent performance in quantum dot electroluminescence technology.

Potential Commercial Applications

The technology could be utilized in the manufacturing of high-quality displays, lighting products, and other electronic devices requiring efficient and long-lasting light emission.

Possible Prior Art

Prior art may include patents or research related to quantum dot electroluminescence devices, materials for hole transport layers, and methods for improving light emitting efficiency in electronic devices.

How does this technology compare to existing quantum dot electroluminescence devices in terms of luminous efficiency and light emitting life-span?

This article does not provide a direct comparison with existing technologies in the field.

What are the specific design film thicknesses used in the device and how do they contribute to improving the uniformity of the light emitting surface?

The article does not delve into the specific design film thicknesses and their impact on the device's performance.

Original Abstract Submitted

a device having design film thicknesses, to suppress non-uniformity of a light emitting surface, to provide a quantum dot electroluminescence device with good luminous efficiency and light emitting life-span, and to provide an excellent quantum dot electroluminescence device with luminous efficiency and light emitting life-span. a quantum dot electroluminescence device including a hole transport layer, an electron transport layer, and a light emitting layer disposed between the hole transport layer and the electron transport layer, wherein the hole transport layer includes a polymer material and a low molecular material, the light emitting layer includes a quantum dot having a core-shell structure, and a residual film ratio of the hole transport layer is greater than or equal to about 95%.