Samsung electronics co., ltd. (20240113182). INTEGRATED CIRCUIT DEVICE simplified abstract
Contents
- 1 INTEGRATED CIRCUIT DEVICE
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Yonghee Park of Hwaseong-si (KR)
Myunggil Kang of Suwon-si (KR)
Uihui Kwon of Hwaseong-si (KR)
Youngseok Song of Hwaseong-si (KR)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113182 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation
The integrated circuit device described in the abstract includes a fin-type active region on a substrate, a gate line intersecting the fin-type active region, a gate contact connected to the gate line, source/drain regions adjacent to the gate line, and source/drain contacts on the source/drain regions.
- Fin-type active region on a substrate
- Gate line intersecting the fin-type active region
- Gate contact connected to the gate line
- Source/drain regions adjacent to the gate line
- Source/drain contacts on the source/drain regions
Potential Applications
The technology described in the patent application could be applied in the development of advanced integrated circuits for various electronic devices, such as smartphones, tablets, and computers.
Problems Solved
This technology helps in improving the performance and efficiency of integrated circuits by optimizing the layout and design of the components, such as the gate line and source/drain regions.
Benefits
The benefits of this technology include enhanced functionality, increased speed, and reduced power consumption in electronic devices that use integrated circuits based on this design.
Potential Commercial Applications
The technology could be utilized in the semiconductor industry for manufacturing high-performance integrated circuits, leading to the development of faster and more energy-efficient electronic devices.
Possible Prior Art
One possible prior art for this technology could be the development of finFET transistors, which also utilize fin-type active regions for improved performance in integrated circuits.
Unanswered Questions
How does this technology compare to existing integrated circuit designs in terms of performance and efficiency?
This article does not provide a direct comparison between this technology and existing integrated circuit designs. Further research or testing would be needed to determine the specific advantages of this innovation over current solutions.
What are the potential challenges or limitations of implementing this technology in mass production?
The article does not address the challenges or limitations that may arise when implementing this technology in mass production. Factors such as cost, scalability, and compatibility with existing manufacturing processes could be important considerations that are not covered in the abstract.
Original Abstract Submitted
an integrated circuit device includes a fin-type active region disposed on a substrate and extending in a first horizontal direction, a gate line disposed on the fin-type active region and extending in a second horizontal direction intersecting the first horizontal direction, the gate line including, a connection protrusion portion including a protrusion top surface at a first vertical level from the substrate, and a main gate portion including a recess top surface extending in the second horizontal direction from the connection protrusion portion, the recess top surface being at a second vertical level lower than the first vertical level, a gate contact disposed on the gate line and connected to the connection protrusion portion, a source/drain region disposed on the fin-type active region and disposed adjacent to the gate line, and a source/drain contact disposed on the source/drain region.
