Samsung electronics co., ltd. (20240113163). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
JEONGHYUK Yim of SUWON-SI (KR)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113163 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes a substrate with an active pattern, a channel pattern, and a source/drain pattern. It also features a gate electrode, a gate contact, and specific layers with varying oxygen concentrations.
- Substrate with active, channel, and source/drain patterns
- Gate electrode on the channel pattern
- Gate contact with capping layer and metal layer
- Metal layer with oxygen concentration of 2-10 at %
- Capping layer with oxygen concentration of 15-30 at %
Potential Applications
The technology described in this patent application could be applied in the development of advanced semiconductor devices for various electronic applications, such as mobile devices, computers, and communication systems.
Problems Solved
This technology addresses the challenge of improving the performance and reliability of semiconductor devices by optimizing the structure and composition of the gate contact layers, specifically focusing on controlling the oxygen concentration in the metal and capping layers.
Benefits
The benefits of this technology include enhanced device performance, increased operational efficiency, and improved overall reliability of semiconductor devices. By carefully managing the oxygen concentration in the gate contact layers, the device can exhibit better electrical properties and longevity.
Potential Commercial Applications
"Optimizing Oxygen Concentration in Gate Contact Layers for Enhanced Semiconductor Device Performance" could find applications in the semiconductor industry for the production of high-performance electronic devices. This technology may be particularly valuable for manufacturers looking to improve the quality and reliability of their semiconductor products.
Possible Prior Art
One possible prior art in this field could be research or patents related to gate contact structures in semiconductor devices, focusing on the impact of oxygen concentration on device performance and reliability.
Unanswered Questions
How does the oxygen concentration in the gate contact layers affect the electrical properties of the semiconductor device?
The abstract mentions specific ranges of oxygen concentration in the metal and capping layers, but it does not elaborate on how these concentrations impact the device's electrical characteristics.
What specific metal is used in the capping layer and metal layer of the gate contact?
While the abstract mentions that the capping layer and metal layer contain the same metal, it does not specify the exact type of metal utilized in this semiconductor device.
Original Abstract Submitted
a semiconductor device includes; a substrate including an active pattern, a channel pattern and a source/drain pattern on the active pattern, wherein the channel pattern is connected to the source/drain pattern, a gate electrode on the channel pattern, and a gate contact connected to a top surface of the gate electrode, wherein the gate contact includes a capping layer directly contacting the top surface of the gate electrode and a metal layer on the capping layer, wherein the capping layer and the metal layer include the same metal, a concentration of oxygen in the metal layer ranges from between about 2 at % to about 10 at %, and a maximum concentration of oxygen in the capping layer ranges from between about 15 at % to about 30 at %.
