Samsung electronics co., ltd. (20240113127). SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC MATERIAL, NEUROMORPHIC CIRCUIT INCLUDING THE SEMICONDUCTOR DEVICE, AND NEUROMORPHIC COMPUTING APPARATUS INCLUDING THE NEUROMORPHIC CIRCUIT simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC MATERIAL, NEUROMORPHIC CIRCUIT INCLUDING THE SEMICONDUCTOR DEVICE, AND NEUROMORPHIC COMPUTING APPARATUS INCLUDING THE NEUROMORPHIC CIRCUIT
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC MATERIAL, NEUROMORPHIC CIRCUIT INCLUDING THE SEMICONDUCTOR DEVICE, AND NEUROMORPHIC COMPUTING APPARATUS INCLUDING THE NEUROMORPHIC CIRCUIT - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC MATERIAL, NEUROMORPHIC CIRCUIT INCLUDING THE SEMICONDUCTOR DEVICE, AND NEUROMORPHIC COMPUTING APPARATUS INCLUDING THE NEUROMORPHIC CIRCUIT
Organization Name
Inventor(s)
Sangwook Kim of Seongnam-si (KR)
SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC MATERIAL, NEUROMORPHIC CIRCUIT INCLUDING THE SEMICONDUCTOR DEVICE, AND NEUROMORPHIC COMPUTING APPARATUS INCLUDING THE NEUROMORPHIC CIRCUIT - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113127 titled 'SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC MATERIAL, NEUROMORPHIC CIRCUIT INCLUDING THE SEMICONDUCTOR DEVICE, AND NEUROMORPHIC COMPUTING APPARATUS INCLUDING THE NEUROMORPHIC CIRCUIT
Simplified Explanation
The semiconductor device described in the abstract includes three transistors, with the third transistor having a gate insulating film made of a ferroelectric material.
- The first transistor has a channel layer of a first conductivity type.
- The second transistor, parallel to the first, has a channel layer of a second conductivity type.
- The third transistor is stacked on the first two transistors and includes a gate insulating film with a ferroelectric material, a third channel layer, and a gate electrode.
Potential Applications
This semiconductor device could be used in:
- Memory devices
- Logic circuits
- Power management systems
Problems Solved
This technology helps in:
- Improving performance and efficiency of semiconductor devices
- Enhancing data retention in memory devices
Benefits
The benefits of this technology include:
- Increased speed and reliability of semiconductor devices
- Reduced power consumption
- Enhanced memory retention capabilities
Potential Commercial Applications
This technology could be applied in:
- Consumer electronics
- Automotive electronics
- Industrial automation systems
Possible Prior Art
One possible prior art could be the use of ferroelectric materials in memory devices to enhance data retention capabilities.
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor devices in terms of performance and efficiency. Further research or testing may be needed to determine the specific advantages of this technology over existing ones.
What are the potential challenges in implementing this technology on a large scale for commercial applications?
The article does not address the potential challenges in implementing this technology on a large scale for commercial applications. Factors such as cost, scalability, and compatibility with existing systems could be important considerations that need to be explored further.
Original Abstract Submitted
a semiconductor device includes a first transistor including a first channel layer of a first conductivity type, a second transistor provided in parallel with the first transistor and including a second channel layer of a second conductivity type, and a third transistor stacked on the first and second transistors. the third transistor may include a gate insulating film including a ferroelectric material. the third transistor may include third channel layer and a gate electrode that are spaced apart from each other in a thickness direction with the gate insulating film therebetween.
