Samsung electronics co., ltd. (20240113122). SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jin-Su Lee of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113122 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application includes a bottom electrode on a substrate, a supporting pattern between the bottom electrode and an adjacent bottom electrode, a top electrode covering the bottom electrode and the supporting pattern, and a dielectric layer between the bottom electrode and the top electrode and between the supporting pattern and the top electrode. The bottom electrode may have a first portion with a seam and a second portion on top of the first portion, with the top end of the second portion lower than the upper surface of the supporting pattern, and a portion of the bottom end of the second portion exposed to the seam.
- Bottom electrode on a substrate
- Supporting pattern between bottom electrodes
- Top electrode covering bottom electrode and supporting pattern
- Dielectric layer between bottom electrode and top electrode
- First portion of bottom electrode with seam and second portion on top
- Top end of second portion lower than supporting pattern
- Portion of bottom end of second portion exposed to seam
Potential Applications
The semiconductor device described in the patent application could be used in various electronic devices such as sensors, memory devices, and integrated circuits.
Problems Solved
This technology solves the problem of improving the performance and reliability of semiconductor devices by providing a structure with enhanced electrical properties and reduced signal interference.
Benefits
The benefits of this technology include increased efficiency, improved signal transmission, and enhanced durability of semiconductor devices.
Potential Commercial Applications
Potential commercial applications of this technology include the manufacturing of advanced electronic devices for consumer electronics, telecommunications, and automotive industries.
Possible Prior Art
One possible prior art for this technology could be the use of similar structures in previous semiconductor devices to improve electrical properties and reduce signal interference.
Unanswered Questions
How does this technology compare to existing semiconductor device structures in terms of performance and reliability?
The article does not provide a direct comparison with existing semiconductor device structures to evaluate the performance and reliability improvements offered by this technology.
What are the specific manufacturing processes required to produce semiconductor devices with this structure?
The article does not detail the specific manufacturing processes involved in producing semiconductor devices with the described structure.
Original Abstract Submitted
a semiconductor device includes; a bottom electrode on a substrate, a supporting pattern between the bottom electrode and an adjacent bottom electrode, a top electrode covering the bottom electrode and the supporting pattern, and a dielectric layer between the bottom electrode and the top electrode and between the supporting pattern and the top electrode. the bottom electrode may include a first portion including a seam and a second portion on the first portion, a top end of the second portion may be disposed at a height lower than an upper surface of the supporting pattern, and a portion of a bottom end of the second portion may be exposed to the seam.
