SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

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SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113110 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Simplified Explanation

The semiconductor device described in the abstract includes active patterns on pMOS regions, source/drain patterns on the active patterns, and channel patterns between the source/drain patterns. The device also features different germanium concentrations in the source/drain patterns and varying numbers of semiconductor layers in the source/drain patterns.

First and second active patterns on pMOS regions
Two source/drain patterns on each active pattern
Channel patterns between the source/drain patterns
Different germanium concentrations in the source/drain patterns
Varying numbers of semiconductor layers in the source/drain patterns

Potential Applications

The technology described in the patent application could be applied in the development of advanced semiconductor devices for various electronic applications, such as mobile devices, computers, and other consumer electronics.

Problems Solved

This technology addresses the need for improved performance and efficiency in semiconductor devices by optimizing the design of source/drain patterns and semiconductor layers.

Benefits

The benefits of this technology include enhanced device performance, increased efficiency, and potentially reduced power consumption in electronic devices.

Potential Commercial Applications

The technology could find commercial applications in the semiconductor industry for the production of high-performance and energy-efficient electronic devices.

Possible Prior Art

One possible prior art for this technology could be the use of different materials or structures in source/drain patterns to improve device performance.

Unanswered Questions

How does this technology compare to existing semiconductor device designs in terms of performance and efficiency?

This article does not provide a direct comparison with existing semiconductor device designs to evaluate the performance and efficiency improvements offered by the described technology.

What are the specific electronic applications that could benefit the most from this technology?

The article does not specify the particular electronic applications that could benefit the most from the technology described in the patent application.

Original Abstract Submitted

a semiconductor device includes first and second active patterns on first and second pmos regions, two first source/drain patterns spaced apart along a first direction on the first active pattern and a first channel pattern including first semiconductor patterns between the two first source/drain patterns, and two second source/drain patterns spaced apart along the first direction on the second active pattern and a second channel pattern including second semiconductor patterns between the two second source/drain patterns. a width in a second direction of the each of the first semiconductor patterns is greater than a width of each of the second semiconductor patterns. each of the first and second source/drain patterns includes semiconductor layers having different germanium concentrations. a number of the semiconductor layers of each of the two second source/drain patterns is greater than a number of the semiconductor layers of each of the two first source/drain patterns.

Samsung electronics co., ltd. (20240113110). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract

Contents

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

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