Samsung electronics co., ltd. (20240107753). INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract

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INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

Dongwon Lim of Suwon-si (KR)

Inseok Baek of Suwon-si (KR)

Sangbin Ahn of Suwon-si (KR)

Seokyeong Choi of Suwon-si (KR)

Seungyong Hong of Suwon-si (KR)

INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240107753 titled 'INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME

Simplified Explanation

The integrated circuit device described in the patent application includes a first cell block on a substrate with a first cell area and a first dummy cell area surrounding the first cell area. The first dummy cell area contains first active regions and second active regions in the outer periphery, with the second active regions being larger in size than the first active regions. Additionally, the device features first and second word lines that alternate in direction, with first landing areas extending between the active regions.

  • First cell block with first and second active regions
  • First and second word lines with landing areas

Potential Applications

The technology described in the patent application could be applied in:

  • Memory devices
  • Microprocessors

Problems Solved

This technology helps in:

  • Increasing memory density
  • Improving data processing speed

Benefits

The benefits of this technology include:

  • Enhanced performance
  • Higher efficiency in data storage and retrieval

Potential Commercial Applications

The potential commercial applications of this technology could be in:

  • Semiconductor industry
  • Electronics manufacturing

Possible Prior Art

One possible prior art for this technology could be:

  • Memory cell structures with similar word line configurations

Unanswered Questions

How does this technology compare to existing memory cell structures in terms of performance and efficiency?

The article does not provide a direct comparison between this technology and existing memory cell structures. Further research and analysis would be needed to determine the specific advantages and disadvantages of this innovation.

What are the potential challenges in implementing this technology on a large scale for commercial production?

The article does not address the potential challenges in scaling up this technology for commercial production. Factors such as cost, manufacturing processes, and compatibility with existing systems could pose challenges that need to be explored further.


Original Abstract Submitted

an integrated circuit device including a first cell block on a substrate that includes a first cell area, a first dummy cell area surrounding the first cell area in a plan view, the first dummy cell area including first active regions and second active regions in an outer periphery of the first dummy cell area, the first active regions each having a first size and the second active regions each having a second size larger than the first size, first and second word lines extending in a first direction and alternating with each other in a second direction, each of the first word lines including a first landing area extending between a second active region and a first active region, the first active region being near and apart from the second active region in the second direction, and first word line contacts on the first landing area may be provided.