Samsung electronics co., ltd. (20240107195). IMAGE SENSOR AND IMAGE PROCESSING DEVICE INCLUDING THE SAME simplified abstract
Contents
- 1 IMAGE SENSOR AND IMAGE PROCESSING DEVICE INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 IMAGE SENSOR AND IMAGE PROCESSING DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
IMAGE SENSOR AND IMAGE PROCESSING DEVICE INCLUDING THE SAME
Organization Name
Inventor(s)
Seunghyun Lim of Suwon-si (KR)
IMAGE SENSOR AND IMAGE PROCESSING DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240107195 titled 'IMAGE SENSOR AND IMAGE PROCESSING DEVICE INCLUDING THE SAME
Simplified Explanation
An image sensor is described in the patent application, which includes a pixel array with multiple pixels arranged in rows, each pixel consisting of a photodiode, a transfer transistor, a conversion gain control transistor, a source follower, precharge selection transistor, capacitors, sampling transistors, and selection transistors connected to column lines.
- The image sensor comprises a pixel array with various components in each pixel, including a photodiode, transfer transistor, conversion gain control transistor, source follower, precharge selection transistor, capacitors, sampling transistors, and selection transistors.
- The components work together to transfer photocharges, amplify and output voltages, and control the conversion gain, ultimately capturing and processing images effectively.
Potential Applications
The technology described in the patent application could be used in:
- Digital cameras
- Smartphones
- Surveillance cameras
- Medical imaging devices
Problems Solved
This technology helps in:
- Improving image quality
- Enhancing low-light performance
- Reducing noise in images
- Increasing overall sensor efficiency
Benefits
The benefits of this technology include:
- Higher quality images
- Better performance in low-light conditions
- Reduced noise in captured images
- Improved overall sensor efficiency
Potential Commercial Applications
The potential commercial applications of this technology could be seen in:
- Consumer electronics industry
- Security and surveillance industry
- Medical imaging industry
- Automotive industry
Possible Prior Art
One possible prior art in this field is the CMOS image sensor technology, which has been widely used in various imaging devices before the development of this specific image sensor technology.
Unanswered Questions
How does this technology compare to other existing image sensor technologies in terms of performance and efficiency?
The article does not provide a direct comparison with other existing image sensor technologies, leaving a gap in understanding the competitive advantages of this specific technology.
What are the potential limitations or drawbacks of implementing this technology in practical applications?
The article does not address any potential limitations or drawbacks of implementing this technology, leaving room for further exploration into its real-world challenges and constraints.
Original Abstract Submitted
an image sensor comprising a pixel array in which a plurality of pixels are arranged and a row driver . each of the pixel includes a photodiode, a transfer transistor for transferring photocharges of the photodiode to a floating diffusion node (fd), a conversion gain control transistor, a first source follower for amplifying and outputting the voltage of the fd to a first node, a precharge selection transistor connected between the first node and a second node, a first capacitor, a first sampling transistor connected between the second node and the first capacitor, a second capacitor, a second sampling transistor connected between the second node and the second capacitor, a second source follower for amplifying a voltage of the second node, a first selection transistor connected between the second source follower and a column line, and a second selection transistor connected between the first node and the column line.
