Samsung electronics co., ltd. (20240105842). METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Sunghwan Jang of Suwon-si (KR)
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105842 titled 'METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a method of manufacturing a semiconductor device involving selective epitaxial growth processes, etching processes, and the formation of gate structures and impurity regions.
- Selective epitaxial growth (SEG) process is performed on a substrate to form a first channel.
- First etching process is performed to form a first recess through the first channel and an upper portion of the substrate.
- Sidewall of the first channel exposed by the first recess is slanted with respect to an upper surface of the substrate.
- Second SEG process is performed to form a second channel on a surface of the substrate and the sidewall of the first channel exposed by the first recess.
- Gate structure is formed to fill the first recess.
- Impurity region is formed at an upper portion of the substrate adjacent to the gate structure.
Potential Applications
This technology can be applied in the manufacturing of advanced semiconductor devices, such as high-performance transistors and integrated circuits.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by enabling precise control over the formation of channels, gate structures, and impurity regions.
Benefits
- Enhanced device performance - Increased efficiency - Precise control over device characteristics
Potential Commercial Applications
Optimizing Semiconductor Manufacturing Processes for Advanced Devices
Possible Prior Art
One possible prior art could be the use of similar processes in the manufacturing of semiconductor devices, but with variations in the specific steps and techniques used.
=== What are the specific materials used in the epitaxial growth process? The specific materials used in the epitaxial growth process are not mentioned in the abstract.
=== How does the slanted sidewall of the first channel impact the device performance? The impact of the slanted sidewall of the first channel on device performance is not discussed in detail in the abstract.
Original Abstract Submitted
in a method of manufacturing a semiconductor device, a first selective epitaxial growth (seg) process is performed on a substrate to form a first channel. a first etching process is performed to form a first recess through the first channel and an upper portion of the substrate. a sidewall of the first channel exposed by the first recess is slanted with respect to an upper surface of the substrate. a second seg process is performed to form a second channel on a surface of the substrate and the sidewall of the first channel exposed by the first recess. a gate structure is formed to fill the first recess. an impurity region is formed at an upper portion of the substrate adjacent to the gate structure.
