Samsung electronics co., ltd. (20240105791). INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
Contents
- 1 INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Daeyoung Moon of Suwon-si (KR)
Jonghyeok Kim of Suwon-si (KR)
Hyokyoung Kim of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105791 titled 'INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The integrated circuit device described in the abstract includes a substrate with active regions, device isolation layers, bitlines, insulating fences, buried contacts, and vertical insulating layers.
- The substrate contains active regions and device isolation layers that define the active regions.
- The bitlines are spaced apart in a horizontal direction on the substrate and extend in a different horizontal direction.
- Insulating fences are placed between adjacent bitlines.
- Buried contacts connect to the active regions and are positioned between adjacent bitlines and insulating fences.
- Vertical insulating layers are located between the insulating fences and buried contacts.
Potential Applications
This technology could be applied in the development of advanced integrated circuits for various electronic devices, such as smartphones, computers, and IoT devices.
Problems Solved
This innovation helps in improving the performance and efficiency of integrated circuits by enhancing the connectivity and isolation of different components within the device.
Benefits
The integrated circuit device offers increased functionality, reduced power consumption, and enhanced reliability, making it suitable for a wide range of applications in the electronics industry.
Potential Commercial Applications
The technology can be utilized in the production of high-performance semiconductor devices for consumer electronics, automotive systems, and industrial equipment.
Possible Prior Art
One possible prior art in this field could be the use of similar structures and components in previous integrated circuit designs to achieve specific functionalities and performance improvements.
Unanswered Questions
How does this technology compare to existing integrated circuit designs in terms of performance and efficiency?
This article does not provide a direct comparison with existing integrated circuit designs to evaluate the performance and efficiency improvements offered by this technology.
What are the specific manufacturing processes involved in implementing this integrated circuit device?
The article does not delve into the detailed manufacturing processes required to fabricate this integrated circuit device, leaving a gap in understanding the practical implementation of the technology.
Original Abstract Submitted
an integrated circuit device includes a substrate including a plurality of active regions; a plurality of device isolation layers provided in the substrate and defining the plurality of active regions; a plurality of bitlines spaced apart from each other in a first horizontal direction on the substrate and extending in a second horizontal direction crossing the first horizontal direction; a plurality of insulating fences spaced apart from each other in the second horizontal direction and provided between adjacent bitlines of the plurality of bitlines; a plurality of buried contacts connected to the plurality of active regions and provided between adjacent bitlines of the plurality of bitlines and between the plurality of insulating fences; and a plurality of vertical insulating layers vertically positioned between the plurality of insulating fences and the plurality of buried contacts.
