Samsung electronics co., ltd. (20240105789). SEMICONDUCTOR DEVICE INCLUDING A FIELD EFFECT TRANSISTOR simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE INCLUDING A FIELD EFFECT TRANSISTOR
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE INCLUDING A FIELD EFFECT TRANSISTOR - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE INCLUDING A FIELD EFFECT TRANSISTOR
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE INCLUDING A FIELD EFFECT TRANSISTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105789 titled 'SEMICONDUCTOR DEVICE INCLUDING A FIELD EFFECT TRANSISTOR
Simplified Explanation
The present inventive concepts provide a semiconductor device with a unique structure, including a substrate with an active pattern, a channel pattern, first and second source/drain patterns, a gate electrode, and active contacts.
- The channel pattern consists of vertically stacked semiconductor patterns that are spaced apart from each other.
- The gate electrode includes inner electrodes between neighboring semiconductor patterns and an outer electrode on the uppermost semiconductor pattern.
Potential Applications
This technology could be applied in the development of advanced semiconductor devices for various electronic applications, such as in integrated circuits, microprocessors, and memory devices.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by optimizing the layout and design of the components, leading to enhanced functionality and reliability.
Benefits
The benefits of this technology include increased speed, reduced power consumption, improved scalability, and enhanced overall performance of semiconductor devices.
Potential Commercial Applications
The potential commercial applications of this technology could be in the semiconductor industry for manufacturing high-performance electronic devices, leading to advancements in computing, communication, and consumer electronics.
Possible Prior Art
One possible prior art could be the use of similar stacked semiconductor patterns in the design of advanced semiconductor devices, but the specific configuration and layout described in this patent application may be novel and inventive.
Unanswered Questions
How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor device structures in terms of performance and efficiency.
What are the potential challenges in implementing this technology on a large scale for commercial production?
This article does not address the potential challenges in implementing this technology on a large scale for commercial production.
Original Abstract Submitted
embodiments of the present inventive concepts provide a semiconductor device including a substrate that includes an active pattern, a channel pattern disposed on the active pattern, a first source/drain pattern and a second source/drain pattern that are connected to the plurality of semiconductor patterns, a gate electrode disposed on the plurality of semiconductor patterns, and a first active contact electrically connected to the first source/drain pattern and a second active contact electrically connected to the second source/drain pattern. in one aspect, the channel pattern includes a plurality of semiconductor patterns that are spaced apart from and vertically stacked on each other. in one aspect, the gate electrode includes inner electrodes disposed between neighboring semiconductor patterns of the plurality of semiconductor patterns and an outer electrode disposed on an uppermost semiconductor pattern.
