Samsung electronics co., ltd. (20240105765). CAPACITOR STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract
Contents
- 1 CAPACITOR STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 CAPACITOR STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
CAPACITOR STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
Organization Name
Inventor(s)
Hyungsuk Jung of SUWON-SI (KR)
CAPACITOR STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105765 titled 'CAPACITOR STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
Simplified Explanation
The capacitor structure described in the patent application includes multiple layers of conductive patterns, electrodes, and dielectric structures to create capacitors on a substrate. The first capacitor and the second capacitor are electrically insulated from each other.
- The patent application describes a capacitor structure with multiple layers of conductive patterns, electrodes, and dielectric structures.
- The first capacitor includes first lower electrodes, first upper electrodes, and first dielectric structures.
- The second capacitor includes second lower electrodes, second upper electrodes, and second dielectric structures.
- The first and second conductive patterns are electrically insulated from each other.
Potential Applications
The technology described in the patent application could be applied in various electronic devices such as smartphones, tablets, laptops, and other consumer electronics that require capacitors for energy storage and signal processing.
Problems Solved
This technology solves the problem of efficiently integrating multiple capacitors in a compact space on a substrate while ensuring electrical insulation between different capacitor structures.
Benefits
The benefits of this technology include improved efficiency in energy storage and signal processing, compact design for electronic devices, and enhanced performance due to the optimized capacitor structure.
Potential Commercial Applications
The technology could be commercially applied in the semiconductor industry for manufacturing electronic components and devices with high-performance capacitors. The section title for SEO optimization could be "Commercial Applications of Capacitor Structure Technology."
Possible Prior Art
One possible prior art could be the use of similar capacitor structures in integrated circuits and electronic devices to improve energy storage and signal processing capabilities.
Unanswered Questions
How does the capacitor structure impact the overall performance of electronic devices?
The article does not provide specific details on how the capacitor structure affects the performance metrics of electronic devices, such as speed, power consumption, or signal quality.
Are there any limitations or drawbacks to the capacitor structure technology described in the patent application?
The article does not address any potential limitations or drawbacks of implementing the capacitor structure technology in practical applications, such as manufacturing costs, complexity, or compatibility with existing systems.
Original Abstract Submitted
a capacitor structure includes a first lower conductive pattern, a first capacitor, a first upper conductive pattern, a second lower conductive pattern, a second capacitor and a second upper conductive pattern. the first capacitor includes first lower electrodes, first upper electrodes and first dielectric structures. each of the first dielectric structures are disposed between one of the first lower electrodes and a corresponding one of the first upper electrodes. the first upper conductive pattern is formed on and is electrically connected to the first upper electrodes. the second lower conductive pattern is spaced apart from the first lower conductive pattern disposed on the substrate. the second capacitor includes second lower electrodes, second upper electrodes and second dielectric structures. the second upper conductive pattern is formed on and is electrically connected to the second upper electrodes. the first and second conductive patterns are electrically insulated from each other.
