Samsung electronics co., ltd. (20240105717). SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Sunme Lim of Suwon-si, Gyeonggi-do (KR)
Changjoon Yoon of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105717 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application includes nanosheet structures with a diffusion break pattern between them, epitaxial patterns in direct contact with the nanosheet structures and the diffusion break pattern, and specific angles between contact points at the end portions of the structures.
- Nanosheet structures with different widths
- Diffusion break pattern between nanosheet structures
- Epitaxial patterns in direct contact with nanosheet structures and diffusion break pattern
- Specific angle requirement between contact points at end portions
Potential Applications
The technology described in the patent application could be applied in:
- Advanced semiconductor devices
- High-performance electronics
- Nanotechnology research
Problems Solved
This technology helps in:
- Enhancing semiconductor device performance
- Improving integration of nanosheet structures
- Reducing diffusion between structures
Benefits
The benefits of this technology include:
- Increased efficiency in semiconductor devices
- Better control over diffusion processes
- Enhanced overall device performance
Potential Commercial Applications
The technology could be used in:
- Next-generation smartphones
- High-speed computing systems
- Advanced medical devices
Possible Prior Art
One possible prior art could be the use of diffusion break patterns in semiconductor devices to control diffusion processes. However, the specific angle requirement between contact points at the end portions of nanosheet structures may be a novel aspect of this technology.
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance and efficiency?
This article does not provide a direct comparison between this technology and existing semiconductor devices in terms of performance and efficiency. Further research or testing may be needed to determine the advantages of this technology over current solutions.
What are the potential challenges or limitations of implementing this technology in practical applications?
The article does not address the potential challenges or limitations of implementing this technology in practical applications. Factors such as scalability, manufacturing costs, and compatibility with existing systems could be important considerations that are not covered in this article.
Original Abstract Submitted
a semiconductor device may include a first nanosheet structure having a first width, a second nanosheet structure having a second width and a diffusion break pattern disposed between the first and second nanosheet structures in a first direction. a first epitaxial pattern is disposed between the first nanosheet structure and the diffusion break pattern and is in direct contact therewith. a second epitaxial pattern is disposed between the second nanosheet structure and the diffusion break pattern and is in direct contact therewith. at least one of imaginary first lines connecting a first contact point of an end portion between the diffusion break pattern and the first epitaxial pattern and a second contact point at an end portion between the diffusion break pattern and the second epitaxial pattern extends to have an angle less than about 30 degrees with respect to the first direction.
