Samsung electronics co., ltd. (20240105615). FIELD-EFFECT TRANSISTOR WITH UNIFORM SOURCE/DRAIN REGIONS ON SELF-ALIGNED DIRECT BACKSIDE CONTACT STRUCTURES OF BACKSIDE POWER DISTRIBUTION NETWORK (BSPDN) simplified abstract
Contents
- 1 FIELD-EFFECT TRANSISTOR WITH UNIFORM SOURCE/DRAIN REGIONS ON SELF-ALIGNED DIRECT BACKSIDE CONTACT STRUCTURES OF BACKSIDE POWER DISTRIBUTION NETWORK (BSPDN)
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 FIELD-EFFECT TRANSISTOR WITH UNIFORM SOURCE/DRAIN REGIONS ON SELF-ALIGNED DIRECT BACKSIDE CONTACT STRUCTURES OF BACKSIDE POWER DISTRIBUTION NETWORK (BSPDN) - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing methods of connecting source/drain regions in field-effect transistors?
- 1.11 What are the specific performance improvements achieved by this new transistor structure?
- 1.12 Original Abstract Submitted
FIELD-EFFECT TRANSISTOR WITH UNIFORM SOURCE/DRAIN REGIONS ON SELF-ALIGNED DIRECT BACKSIDE CONTACT STRUCTURES OF BACKSIDE POWER DISTRIBUTION NETWORK (BSPDN)
Organization Name
Inventor(s)
Jongjin Lee of Clifton Park NY (US)
Wonhyuk Hong of Clifton Park NY (US)
Kang-Ill Seo of Springfield VA (US)
FIELD-EFFECT TRANSISTOR WITH UNIFORM SOURCE/DRAIN REGIONS ON SELF-ALIGNED DIRECT BACKSIDE CONTACT STRUCTURES OF BACKSIDE POWER DISTRIBUTION NETWORK (BSPDN) - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105615 titled 'FIELD-EFFECT TRANSISTOR WITH UNIFORM SOURCE/DRAIN REGIONS ON SELF-ALIGNED DIRECT BACKSIDE CONTACT STRUCTURES OF BACKSIDE POWER DISTRIBUTION NETWORK (BSPDN)
Simplified Explanation
The patent application describes a field-effect transistor structure with a unique configuration for connecting the source/drain regions to external elements.
- The structure includes a channel structure, a source/drain region, and a 2source/drain region connected through the channel structure.
- A 1contact plug on the top surface of the 1source/drain region is connected to a voltage source or circuit element through a back-end-of-line (BEOL) structure.
- A 2contact plug on the bottom surface of the 2source/drain region is connected to the 1voltage source through a backside power rail or another circuit element, with both regions having the same height.
Potential Applications
This technology could be applied in the semiconductor industry for the development of more efficient and compact field-effect transistors.
Problems Solved
This innovation solves the problem of efficiently connecting source/drain regions of a field-effect transistor to external elements while maintaining a compact design.
Benefits
The benefits of this technology include improved performance, reduced space requirements, and enhanced connectivity in field-effect transistors.
Potential Commercial Applications
A potential commercial application of this technology could be in the manufacturing of high-performance electronic devices such as smartphones, computers, and other consumer electronics.
Possible Prior Art
One possible prior art for this technology could be the traditional methods of connecting source/drain regions in field-effect transistors, which may not be as efficient or compact as the described structure.
Unanswered Questions
How does this technology compare to existing methods of connecting source/drain regions in field-effect transistors?
This article does not provide a direct comparison with existing methods, leaving the reader to wonder about the specific advantages of this new structure over traditional approaches.
What are the specific performance improvements achieved by this new transistor structure?
The article does not delve into the specific performance enhancements resulting from the unique configuration of this field-effect transistor structure, leaving a gap in understanding the full extent of its benefits.
Original Abstract Submitted
provided is field-effect transistor structure including: a channel structure; a source/drain region and a 2source/drain region connected to each other through the channel structure; a 1contact plug, on a top surface of the 1source/drain region, connected to a voltage source or 1circuit element through a back-end-of-line (beol) structure; and a 2contact plug, on a bottom surface of the 2source/drain region, connected to the 1voltage source, through a backside power rail, or another circuit element, wherein the 1source/drain region and the 2source/drain region have a substantially same height.
