Samsung electronics co., ltd. (20240105556). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SHAOFENG Ding of Suwon-si (KR)
JEONG HOON Ahn of Seongnam-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105556 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes various layers and patterns to facilitate the connection and operation of integrated circuits and contacts. Here is a simplified explanation of the patent application:
- The semiconductor device has a substrate with an integrated circuit and a contact.
- It includes an interlayer dielectric layer covering the integrated circuit and the contact.
- A through electrode penetrates the substrate and the interlayer dielectric layer.
- A first intermetal dielectric layer is on top of the interlayer dielectric layer.
- First and second wiring patterns are present in the first intermetal dielectric layer.
- The first wiring pattern connects to the through electrode through a first via.
- The second wiring pattern connects to the contact through a second via.
- The first via is wider than the second via in a specific direction.
Potential Applications of this Technology: - This technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications. - It can be applied in the development of high-performance integrated circuits for consumer electronics, telecommunications, and computing devices.
Problems Solved by this Technology: - This technology helps in improving the connectivity and efficiency of semiconductor devices by providing a reliable and efficient wiring structure. - It addresses the challenges of miniaturization and increasing complexity in semiconductor design by offering a solution for effective signal routing.
Benefits of this Technology: - Enhanced performance and reliability of semiconductor devices. - Improved signal transmission and reduced signal interference. - Increased integration density and functionality in semiconductor chips.
Potential Commercial Applications of this Technology: - The technology can be utilized by semiconductor manufacturers to produce advanced microchips for a wide range of electronic devices. - It can be integrated into the production processes of semiconductor companies to enhance the performance and capabilities of their products.
Possible Prior Art: - Prior art in semiconductor device manufacturing may include similar methods of connecting integrated circuits and contacts through wiring patterns and vias. - Older patents or publications related to intermetal dielectric layers and through electrodes could be considered as prior art for this technology.
Unanswered Questions:
- How does this technology compare to existing methods of wiring in semiconductor devices?
This article provides a detailed description of the wiring structure in the semiconductor device but does not directly compare it to other existing methods. Further research or comparative analysis would be needed to understand the advantages and limitations of this technology in relation to traditional wiring techniques.
- What are the specific performance improvements achieved by the wider first via compared to the second via?
While the abstract mentions that the first via is wider than the second via in a specific direction, it does not elaborate on the performance benefits of this design choice. Additional information or data on the impact of the via width on signal transmission, power efficiency, or other key metrics would be necessary to fully assess the significance of this feature.
Original Abstract Submitted
a semiconductor device includes a substrate provided with an integrated circuit and a contact, an interlayer dielectric layer covering the integrated circuit and the contact, a through electrode penetrating the substrate and the interlayer dielectric layer, a first intermetal dielectric layer on the interlayer dielectric layer, and first and second wiring patterns in the first intermetal dielectric layer. the first wiring pattern includes a first conductive pattern on the through electrode, and a first via penetrating the first intermetal dielectric layer and connecting the first conductive pattern to the through electrode. the second wiring pattern includes a second conductive pattern on the contact, and a second via penetrating the first intermetal dielectric layer and connecting the second conductive pattern to the contact. a first width in a first direction of the first via is greater than a second width in the first direction of the second via.
