Samsung electronics co., ltd. (20240099017). SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Hyungsuk Jung of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240099017 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes memory cells with a unique memcitor structure that includes a ferroelectric material, a fixed layer with paraelectric or antiferroelectric material, and electrodes connected to the layers.
- Memory cells in the semiconductor device have a memcitor structure with a ferroelectric material for information storage.
- The memcitor also includes a fixed layer with paraelectric or antiferroelectric material.
- Electrodes are connected to both the information storage layer and the fixed layer, allowing for data storage and retrieval.
Potential Applications
The technology described in the patent application could be applied in:
- Non-volatile memory devices
- High-speed data storage systems
- Embedded memory in microcontrollers
Problems Solved
This technology addresses the following issues:
- Data retention in memory cells
- Speed of data storage and retrieval
- Integration of memory cells in semiconductor devices
Benefits
The benefits of this technology include:
- Faster data access times
- Higher data storage density
- Improved reliability of memory cells
Potential Commercial Applications
The technology could be used in various commercial applications such as:
- Consumer electronics
- Automotive systems
- Industrial automation
Possible Prior Art
One possible prior art for this technology is the use of ferroelectric materials in memory cells for data storage. Additionally, the integration of fixed layers with paraelectric or antiferroelectric materials may have been explored in previous research or patents.
Unanswered Questions
How does this technology compare to existing non-volatile memory solutions?
This article does not provide a direct comparison to existing non-volatile memory solutions. It would be interesting to know how the performance, reliability, and cost of this technology stack up against traditional memory technologies.
What are the potential challenges in scaling up this technology for mass production?
The article does not address the scalability of this technology for mass production. Understanding the challenges and potential solutions for scaling up production could be crucial for the commercial viability of this innovation.
Original Abstract Submitted
a semiconductor device includes a plurality of memory cells each including a cell transistor and a memcitor connected to the cell transistor, and the memcitor includes an information storage layer including a ferroelectric material, a first electrode and a second electrode connected to both ends of the information storage layer, a fixed layer stacked on the information storage layer and including a paraelectric material or an antiferroelectric material, and a third electrode connected to the fixed layer without contacting the information storage layer.
