Samsung electronics co., ltd. (20240098974). SEMICONDUCTOR DEVICE INCLUDING BURIED CONTACT AND METHOD FOR MANUFACTURING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE INCLUDING BURIED CONTACT AND METHOD FOR MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE INCLUDING BURIED CONTACT AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE INCLUDING BURIED CONTACT AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE INCLUDING BURIED CONTACT AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240098974 titled 'SEMICONDUCTOR DEVICE INCLUDING BURIED CONTACT AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes various components such as an active pattern, gate structure, bit line structure, buried contact, contact pattern, landing pad, and capacitor structure. The buried contact consists of a first growth portion and a second growth portion that are spaced apart from each other, while the landing pad includes an interposition portion between the first growth portion and the second growth portion.
- Active pattern connected to gate structure, bit line structure, buried contact, and capacitor structure
- Buried contact with first growth portion and second growth portion
- Contact pattern covering buried contact
- Landing pad connected to contact pattern with interposition portion
Potential Applications
This technology could be used in the development of advanced semiconductor devices for various applications such as memory storage, data processing, and communication systems.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by providing a reliable and efficient connection between different components.
Benefits
The benefits of this technology include enhanced functionality, increased reliability, and improved performance of semiconductor devices.
Potential Commercial Applications
Potential commercial applications of this technology could include the production of high-performance memory chips, processors, and other semiconductor devices for consumer electronics, automotive systems, and industrial applications.
Possible Prior Art
One possible prior art could be the use of buried contacts in semiconductor devices to improve connectivity and performance. Another could be the development of landing pads with interposition portions for efficient connections between different components.
What are the specific details of the active pattern in the semiconductor device?
The specific details of the active pattern in the semiconductor device are not provided in the abstract. It would be helpful to know the material composition, size, and design of the active pattern to understand its functionality and performance in the device.
How does the interposition portion in the landing pad contribute to the overall performance of the semiconductor device?
The abstract mentions an interposition portion in the landing pad, but it does not explain how this feature contributes to the overall performance of the semiconductor device. Understanding the role and significance of the interposition portion in improving connectivity and efficiency would provide valuable insights into the technology.
Original Abstract Submitted
a semiconductor device including an active pattern; a gate structure connected to the active pattern; a bit line structure connected to the active pattern; a buried contact connected to the active pattern; a contact pattern covering the buried contact; a landing pad connected to the contact pattern; and a capacitor structure connected to the landing pad, wherein the buried contact includes a first growth portion and a second growth portion spaced apart from each other, and the landing pad includes an interposition portion between the first growth portion and the second growth portion.
