Samsung electronics co., ltd. (20240096991). SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Joongwon Jeon of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096991 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a substrate with first and second regions, active fins extending in different directions on each region, an isolation pattern between the regions, and gate structures on the active fins with varying widths.
- The semiconductor device has active fins on different regions of the substrate, allowing for efficient use of space and improved performance.
- The gate structures on the active fins have varying widths, which can help control the flow of current and improve overall device functionality.
Potential Applications
The technology described in this patent application could be applied in the development of advanced semiconductor devices for various electronic applications, such as mobile devices, computers, and other consumer electronics.
Problems Solved
This technology helps address the challenge of optimizing space on a semiconductor device while maintaining performance and efficiency. By utilizing active fins on different regions of the substrate and gate structures with varying widths, the device can achieve better functionality and overall performance.
Benefits
Some benefits of this technology include improved performance, enhanced efficiency, and optimized use of space on semiconductor devices. The varying widths of the gate structures can help control current flow and enhance the overall functionality of the device.
Potential Commercial Applications
The technology described in this patent application could have potential commercial applications in the semiconductor industry, particularly in the development of advanced electronic devices for consumer and industrial use.
Possible Prior Art
One possible prior art for this technology could be the use of active fins and gate structures in semiconductor devices to improve performance and efficiency. Additionally, variations in gate structure widths may have been explored in previous patents or research studies to enhance device functionality.
Unanswered Questions
How does this technology compare to existing semiconductor devices on the market?
This article does not provide a direct comparison to existing semiconductor devices, so it is unclear how this technology differs or improves upon current products.
What specific electronic applications could benefit most from this technology?
While the potential applications are mentioned in the article, a more detailed analysis of which electronic applications could benefit the most from this technology is not provided.
Original Abstract Submitted
a semiconductor device includes a substrate including first and second regions; a first active fin extending in a first direction on the first region; a second active fin extending in the first direction on the second region; an isolation pattern on the substrate between the first and second regions; a first gate structure on the first active fin, extending in a second direction perpendicular to the first direction, and onto an upper surface of the isolation pattern; and a second gate structure on the second active fin, extending in the second direction, and onto the upper surface of the isolation pattern, wherein the first gate structure includes a first portion having a first width and a second portion having a second width that is less than the first width, and the second gate structure includes a third portion having the first width and a fourth portion having the second width.
