Samsung electronics co., ltd. (20240096984). INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION NETWORK STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract
Contents
- 1 INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION NETWORK STRUCTURE AND METHODS OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION NETWORK STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION NETWORK STRUCTURE AND METHODS OF FORMING THE SAME
Organization Name
Inventor(s)
Jongjin Lee of Clifton Park NY (US)
Tae Sun Kim of Ballston Spa NY (US)
Wonhyuk Hong of Clifton Park NY (US)
Seungchan Yun of Waterford NY (US)
Kang-Ill Seo of Springfield VA (US)
INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION NETWORK STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096984 titled 'INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION NETWORK STRUCTURE AND METHODS OF FORMING THE SAME
Simplified Explanation
The abstract describes a method of forming integrated circuit devices by providing a substrate structure with a semiconductor region, forming preliminary transistor structures on a bottom insulator, replacing a portion of the bottom insulator with a bottom semiconductor layer, forming a source/drain region, replacing the substrate and semiconductor region with a backside insulator, and forming a power contact and power rail.
- Substrate structure with semiconductor region
- Formation of preliminary transistor structures on bottom insulator
- Replacement of portion of bottom insulator with bottom semiconductor layer
- Formation of source/drain region
- Replacement of substrate and semiconductor region with backside insulator
- Formation of power contact and power rail
Potential Applications
This technology can be applied in the manufacturing of advanced integrated circuit devices for various electronic applications such as smartphones, computers, and other electronic devices.
Problems Solved
This technology solves the problem of improving the performance and efficiency of integrated circuit devices by optimizing the structure and materials used in their fabrication.
Benefits
The benefits of this technology include enhanced device performance, increased efficiency, and potentially reduced power consumption in electronic devices.
Potential Commercial Applications
The potential commercial applications of this technology include the semiconductor industry, electronics manufacturing companies, and research institutions working on developing cutting-edge electronic devices.
Possible Prior Art
One possible prior art for this technology could be the use of similar methods in the fabrication of integrated circuit devices, but with different materials or structures.
Unanswered Questions
How does this technology compare to existing methods in terms of cost-effectiveness?
The abstract does not provide information on the cost-effectiveness of this technology compared to existing methods. Further research or analysis would be needed to address this question.
What are the potential limitations or challenges in implementing this technology on a large scale?
The abstract does not mention any potential limitations or challenges in implementing this technology on a large scale. Additional studies or experiments may be required to identify and address any such issues.
Original Abstract Submitted
integrated circuit devices and methods of forming the same are provided. the methods may include providing a substrate structure including a substrate, a bottom insulator and a semiconductor region between the substrate and the bottom insulator, the semiconductor region extending in a first direction; forming first and second preliminary transistor structures on the bottom insulator, wherein and the bottom insulator may include first and second portions that the first and second preliminary transistor structures respectively overlap, and a third portion between the first and second portions; replacing the third portion of the bottom insulator with a bottom semiconductor layer; forming a source/drain region between the first and second preliminary transistor structures; replacing the substrate and the semiconductor region with a backside insulator; forming a power contact in the backside insulator, wherein the source/drain region may overlap the power contact; and forming a power rail.
