Samsung electronics co., ltd. (20240096980). SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096980 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes an active pattern on a substrate with first and second regions, first and second source/drain regions on the first and second regions, first and second source/drain contacts on the first and second source/drain regions, and a separation structure intersecting the active pattern between the first and second source/drain contacts. The separation structure extends into the active pattern between the first and second source/drain regions, with an asymmetrical structure having an upper surface of a first portion adjacent to the first source/drain contact higher than an upper surface of a second portion adjacent to the second source/drain contact.
- The semiconductor device has an active pattern on a substrate with source/drain regions and contacts.
- A separation structure intersects the active pattern between the source/drain contacts, extending into the active pattern between the source/drain regions.
- The separation structure has an asymmetrical structure with different heights on the upper surfaces of its portions.
Potential Applications
The technology described in this patent application could be applied in:
- Semiconductor manufacturing
- Integrated circuit design
- Electronics industry
Problems Solved
This technology helps in:
- Improving the performance of semiconductor devices
- Enhancing the efficiency of electronic components
- Optimizing the layout of integrated circuits
Benefits
The benefits of this technology include:
- Increased functionality of semiconductor devices
- Enhanced reliability of electronic systems
- Improved manufacturing processes
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- Automotive electronics
- Telecommunications industry
Possible Prior Art
One possible prior art related to this technology could be:
- Previous patents on semiconductor device structures with asymmetrical features
Unanswered Questions
How does the asymmetrical structure of the separation element impact the overall performance of the semiconductor device?
The asymmetrical structure of the separation element may affect the electrical characteristics and thermal properties of the device, but the specific details of these effects are not addressed in the abstract.
Are there any limitations to the design or fabrication process of the semiconductor device due to the presence of the separation structure?
The abstract does not provide information on any potential limitations or challenges that may arise during the design or fabrication process of the semiconductor device with the described separation structure.
Original Abstract Submitted
a semiconductor device includes an active pattern on a substrate with first and second regions; first and second source/drain regions on the first and second regions; first and second source/drain contacts on the first and second source/drain regions; and a separation structure intersecting the active pattern between the first and second source/drain contacts, and extending into the active pattern between the first and second source/drain regions, wherein an upper surface of the second source/drain contact is higher than an upper surface of the first source/drain contact, and wherein the separation structure has an asymmetrical structure having an upper surface of a first portion adjacent to the first source/drain contact higher than an upper surface of a second portion adjacent to the second source/drain contact.