Samsung display co., ltd. (20240128421). METAL CHALCOGENIDE THIN FILM, THIN-FILM TRANSISTOR INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE THIN-FILM TRANSISTOR simplified abstract
Contents
- 1 METAL CHALCOGENIDE THIN FILM, THIN-FILM TRANSISTOR INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE THIN-FILM TRANSISTOR
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METAL CHALCOGENIDE THIN FILM, THIN-FILM TRANSISTOR INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE THIN-FILM TRANSISTOR - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
METAL CHALCOGENIDE THIN FILM, THIN-FILM TRANSISTOR INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE THIN-FILM TRANSISTOR
Organization Name
Inventor(s)
Hyungjun Kim of Yongin-si (KR)
Yongyoung Noh of Pohang-si (KR)
Junhyung Lim of Yongin-si (KR)
METAL CHALCOGENIDE THIN FILM, THIN-FILM TRANSISTOR INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE THIN-FILM TRANSISTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240128421 titled 'METAL CHALCOGENIDE THIN FILM, THIN-FILM TRANSISTOR INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE THIN-FILM TRANSISTOR
Simplified Explanation
The patent application describes a display device with a thin-film transistor and a light-emitting diode connected to it. The thin-film transistor includes a semiconductor layer with source, drain, and channel regions, a gate electrode, a source electrode, and a drain electrode. The semiconductor layer is made of a crystallized metal chalcogenide with a layered structure.
- Thin-film transistor with semiconductor layer, gate electrode, source electrode, and drain electrode
- Semiconductor layer made of crystallized metal chalcogenide with a layered structure
Potential Applications
The technology described in this patent application could be applied in:
- OLED displays
- Electronic devices with high-resolution screens
Problems Solved
This technology helps in:
- Improving display quality
- Enhancing energy efficiency in electronic devices
Benefits
The benefits of this technology include:
- Brighter and more vibrant displays
- Lower power consumption
Potential Commercial Applications
The potential commercial applications of this technology could be seen in:
- Smartphone and tablet displays
- Television screens
Possible Prior Art
One possible prior art could be the use of traditional thin-film transistors in display devices before the introduction of metal chalcogenide semiconductor layers.
Unanswered Questions
How does this technology compare to traditional thin-film transistors in terms of performance and efficiency?
This article does not provide a direct comparison between this technology and traditional thin-film transistors. Further research or analysis would be needed to address this question.
What are the potential challenges in implementing this technology on a large scale for commercial production?
The article does not discuss the challenges that may arise in scaling up the production of display devices using this technology. Additional information or studies would be required to answer this question.
Original Abstract Submitted
a display device includes: a substrate; a thin-film transistor on the substrate; and a light-emitting diode electrically connected to the thin-film transistor, wherein the thin-film transistor includes: a semiconductor layer in which a source region, a drain region, and a channel region are defined; a gate electrode insulated from the semiconductor layer and overlapping the semiconductor layer; a source electrode electrically connected to the source region; and a drain electrode electrically connected to the drain region, wherein the semiconductor layer includes a crystallized metal chalcogenide including a transition metal and a chalcogen element and has a layered structure.
