Samsung display co., ltd. (20240121998). THIN-FILM TRANSISTOR, TRANSISTOR ARRAY SUBSTRATE, AND METHOD OF FABRICATING THE TRANSISTOR ARRAY SUBSTRATE simplified abstract
Contents
- 1 THIN-FILM TRANSISTOR, TRANSISTOR ARRAY SUBSTRATE, AND METHOD OF FABRICATING THE TRANSISTOR ARRAY SUBSTRATE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 THIN-FILM TRANSISTOR, TRANSISTOR ARRAY SUBSTRATE, AND METHOD OF FABRICATING THE TRANSISTOR ARRAY SUBSTRATE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.10.1 How does the obtuse angle on the surfaces of the gate electrode and gate insulating layer impact the overall performance of the thin-film transistor?
- 1.10.2 Are there any limitations to the use of obtuse angles on the surfaces of the gate electrode and gate insulating layer in thin-film transistors?
- 1.11 Original Abstract Submitted
THIN-FILM TRANSISTOR, TRANSISTOR ARRAY SUBSTRATE, AND METHOD OF FABRICATING THE TRANSISTOR ARRAY SUBSTRATE
Organization Name
Inventor(s)
Sang Woo Sohn of Yongin-si (KR)
Jung Hoon Lee of Yongin-si (KR)
Hyun Jun Jeong of Yongin-si (KR)
THIN-FILM TRANSISTOR, TRANSISTOR ARRAY SUBSTRATE, AND METHOD OF FABRICATING THE TRANSISTOR ARRAY SUBSTRATE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240121998 titled 'THIN-FILM TRANSISTOR, TRANSISTOR ARRAY SUBSTRATE, AND METHOD OF FABRICATING THE TRANSISTOR ARRAY SUBSTRATE
Simplified Explanation
The patent application describes a thin-film transistor with specific angles for the surfaces of the gate electrode and gate insulating layer.
- The thin-film transistor includes an active layer with a channel region, a source region, and a drain region.
- A gate insulating layer is on the channel region, and a gate electrode is on the gate insulating layer.
- The side surfaces of the gate electrode and gate insulating layer have obtuse angles with respect to the boundary surface between them.
Potential Applications
This technology could be applied in:
- Display panels
- Touchscreen devices
- Integrated circuits
Problems Solved
This technology helps in:
- Improving transistor performance
- Enhancing device reliability
- Reducing power consumption
Benefits
The benefits of this technology include:
- Higher efficiency
- Better device stability
- Increased lifespan
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- Medical devices
- Automotive electronics
Possible Prior Art
One possible prior art for this technology could be the use of different materials for the gate electrode and gate insulating layer in thin-film transistors.
Unanswered Questions
How does the obtuse angle on the surfaces of the gate electrode and gate insulating layer impact the overall performance of the thin-film transistor?
The specific angle chosen for the surfaces of the gate electrode and gate insulating layer could affect the electrical properties and efficiency of the transistor, but the exact impact is not detailed in the abstract.
Are there any limitations to the use of obtuse angles on the surfaces of the gate electrode and gate insulating layer in thin-film transistors?
While the abstract highlights the use of obtuse angles for these surfaces, it does not mention any potential limitations or drawbacks associated with this design choice.
Original Abstract Submitted
a thin-film transistor including an active layer disposed on a substrate and including a channel region, a source region connected to a side of the channel region, and a drain region connected to the other side of the channel region; a gate insulating layer on the channel region of the active layer; and a gate electrode on the gate insulating layer. a slope of each side surface of the gate electrode with respect to a boundary surface between the gate insulating layer and the gate electrode is an obtuse angle (a substantially obtuse angel). a slope of each side surface of the gate insulating layer with respect to the boundary surface between the gate insulating layer and the gate electrode is an obtuse angle (a substantially obtuse angel).
