Samsung display co., ltd. (20240121985). DISPLAY APPARATUS simplified abstract
Contents
DISPLAY APPARATUS
Organization Name
Inventor(s)
Youngsoo Yoon of Yongin-si (KR)
Hyunchol Bang of Yongin-si (KR)
DISPLAY APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240121985 titled 'DISPLAY APPARATUS
Simplified Explanation
The display apparatus described in the patent application includes a substrate with a sub-pixel area, a thin-film transistor, and a capacitor. The thin-film transistor consists of a semiconductor layer and a gate electrode with a gate-insulating layer in between. The capacitor is electrically connected to the thin-film transistor and includes multiple electrodes with inorganic insulating layers in between, as well as an organic insulating layer defining an opening filled with inorganic insulating material.
- Explanation of the patent/innovation:
- Sub-pixel display technology - Thin-film transistor design for improved performance - Capacitor structure with multiple electrodes and insulating layers
Potential applications of this technology: - High-resolution displays - Flexible displays - Touchscreen devices
Problems solved by this technology: - Enhancing display quality - Improving energy efficiency - Increasing device durability
Benefits of this technology: - Sharper images - Lower power consumption - Longer lifespan for devices
Potential commercial applications of this technology: - Smartphones - Tablets - Monitors
Possible prior art: - Previous patents related to thin-film transistors and capacitors in display technology
Unanswered questions: 1. How does this technology compare to existing display technologies in terms of cost-effectiveness? 2. What impact does the use of organic and inorganic insulating layers have on the overall performance of the display apparatus?
Original Abstract Submitted
a display apparatus includes a substrate including a sub-pixel area, a first thin-film transistor in the sub-pixel area, and including a first semiconductor layer, and a first gate electrode overlapping the first semiconductor layer with a gate-insulating layer therebetween, and a capacitor in the sub-pixel area, electrically connected to the first thin-film transistor, and including a first electrode including a same material as the first gate electrode, a second electrode overlapping the first electrode with a first inorganic insulating layer therebetween, a third electrode overlapping the second electrode with a second inorganic insulating layer therebetween, and a fourth electrode overlapping the third electrode with an insulating layer therebetween, the insulating layer being above the second inorganic insulating layer and including a first organic insulating layer defining an opening corresponding to the capacitor and filled with an inorganic insulating material.
