Samsung display co., ltd. (20240121983). THIN FILM TRANSISTOR, AND TRANSISTOR ARRAY SUBSTRATE simplified abstract
Contents
- 1 THIN FILM TRANSISTOR, AND TRANSISTOR ARRAY SUBSTRATE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 THIN FILM TRANSISTOR, AND TRANSISTOR ARRAY SUBSTRATE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing thin film transistor designs in terms of performance and efficiency?
- 1.11 What are the specific manufacturing processes required to implement this technology in electronic device production?
- 1.12 Original Abstract Submitted
THIN FILM TRANSISTOR, AND TRANSISTOR ARRAY SUBSTRATE
Organization Name
Inventor(s)
So Young Koo of Yongin-si (KR)
Myoung Hwa Kim of Yongin-si (KR)
Hyung Jun Kim of Yongin-si (KR)
THIN FILM TRANSISTOR, AND TRANSISTOR ARRAY SUBSTRATE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240121983 titled 'THIN FILM TRANSISTOR, AND TRANSISTOR ARRAY SUBSTRATE
Simplified Explanation
The abstract describes a patent application for a thin film transistor with specific features such as through holes, gate electrode, and electrodes with protrusion parts and groove parts.
- The thin film transistor includes a substrate, an active layer with a channel area, first and second conductive areas, a gate insulating layer, through holes, gate electrode, and electrodes.
- The first electrode is electrically connected to the first conductive area and has protrusion parts at both ends and a concavely recessed groove part.
- The second electrode is electrically connected to the second conductive area.
Potential Applications
The technology described in this patent application could be applied in the manufacturing of electronic devices such as displays, sensors, and integrated circuits.
Problems Solved
This technology solves the problem of improving the performance and efficiency of thin film transistors by optimizing the design of the electrodes and active layer.
Benefits
The benefits of this technology include enhanced electrical conductivity, better control of the transistor operation, and potentially lower power consumption in electronic devices.
Potential Commercial Applications
The technology could be commercially applied in the production of smartphones, tablets, smartwatches, and other electronic devices requiring high-performance thin film transistors.
Possible Prior Art
One possible prior art for this technology could be the development of thin film transistors with through holes and optimized electrode designs in the field of semiconductor manufacturing.
Unanswered Questions
How does this technology compare to existing thin film transistor designs in terms of performance and efficiency?
The article does not provide a direct comparison with existing thin film transistor designs to evaluate the performance and efficiency improvements offered by this technology.
What are the specific manufacturing processes required to implement this technology in electronic device production?
The article does not detail the specific manufacturing processes or techniques needed to incorporate this technology into the production of electronic devices.
Original Abstract Submitted
a thin film transistor includes a substrate; an active layer including a channel area, a first conductive area, and a second conductive area; a gate insulating layer on a portion of the active layer; a first through hole penetrating through a portion of the first conductive area; a second through hole penetrating through a portion of the second conductive area; a gate electrode overlapping the channel area of the active layer; a first electrode electrically connected to the first conductive area; and a second electrode electrically connected to the second conductive area. one side of the first electrode adjacent to the first through hole is parallel to the one side of the first through hole, the first electrode including protrusion parts at both ends thereof and a groove part concavely recessed from the gate electrode.
